Results 121 to 130 of about 40,649 (287)
Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
, 2013 International audience10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested.
Godignon, Philippe +7 more
core +1 more source
Molecular characterization of covRS mutations in M1UK Streptococcus pyogenes
FEBS Open Bio, EarlyView.Group A Streptococcus (GAS) acquires covRS mutations driving a hypervirulent bacterial state, frequently associated with invasive disease‐like necrotizing fasciitis. We demonstrate that the newly emerged M1UK GAS lineage can also acquire these mutations.
Jarrad Pritchard +12 more
wiley +1 more source
Cutaneous Melanoma Drives Metabolic Changes in the Aged Bone Marrow Immune Microenvironment
Aging and Cancer, EarlyView.Melanoma, the deadliest form of skin cancer, increasingly affects older adults. Our study reveals that melanoma induces changes in iron and lipid levels in the bone marrow, impacting immune cell populations and increasing susceptibility to ferroptosis.
Alexis E. Carey +12 more
wiley +1 more source
Optimization of SiC Schottky Diode using Linear P for Edge Termination
, 2013 [[abstract]]The trade-off between on-state and off-state characteristics of 4H-SiC Schottky diode has been optimized using linear p-top in the edge termination structure.
Mri, Aryadeep;Aryadeep Mrinal, ;Kumar, Vijay;Vijay Kumar M P, ;Vivek N, ;Vivek N, ;Manjunatha, M;Manjunatha M, ;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming +1 more
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, 2020 Hexagonal boron nitride nanosheets (h-BNNS), the isoelectronic analog to graphene, have received interest over the past decade due to their high thermal oxidative resistance, high bandgap, catalytic activity, and low cost.
Matthew J. Ryan (8605545) +8 more
core +1 more source
NOVEL EDGE TERMINATION TECHNIQUES FOR MOS CONTROLLED POWER DEVICES
, 2002 This thesis is devoted towards the analysis and development of planar edge termination structures for power semiconductor devices. A systematic study of technology and device performance is presented with extensive numerical results of field limiting ...
BOSE, JAYAPPA VEERAMMA SUBHAS CHANDRA
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The Response of High Voltage 4H-SiC P-N Junction Diodes to Different Edge Termination Techniques
, 1998 Edge termination is an important aspect in the design of high power p-n junction devices. In this paper, we compare the breakdown characteristics of 4H-SiC p+-n diodes with oxide passivation and with edge termination using either low or high energy ion ...
T. N. Oder +5 more
core +1 more source
Wide Bandgap Semiconductor Device With Vertical Superjunction Edge Termination for the Drift Region [PDF]
, 2018 A vertical superjunction edge termination structure for the drift region of wide bandgap semiconductor devices that provides a low resistance and high off voltage allowing the breakdown voltage of the superjunction drift region to be ...
Martino, Christopher Adrian
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Arthritis Care &Research, EarlyView.Over the past 50 years, the science of pediatric rheumatology has grown exponentially due to an expansion in the understanding of complex rheumatic conditions and a surge in novel targeted therapeutics. Physician‐scientists in the field of pediatric rheumatology have played major roles in these advancements that have improved the care of children ...
Ekemini A. Ogbu +2 more
wiley +1 more source
Disentangling core and edge mechanisms of the density limit in DIII-D negative triangularity plasmas
Nuclear FusionThe density limit is investigated in the DIII-D negative triangularity plasmas which lack a standard H-mode edge. We find the limit may not be a singular disruptive boundary but a multifaceted density saturation phenomenon governed by distinct core and ...
R. Hong +16 more
doaj +1 more source