Results 101 to 110 of about 40,649 (287)

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

open access: yes, 1999
P-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal ...
S. Soloviev   +3 more
core   +1 more source

Variability of MHD instabilities in benign termination of high-current runaway electron beams in the JET and DIII-D tokamaks

open access: yesNuclear Fusion
Benign termination, in which magnetohydrodynamic (MHD) instabilities deconfine runaway electrons (REs) following hydrogenic injections, is a promising strategy for mitigating dangerous RE loads after disruptions.
C.F.B. Zimmermann   +16 more
doaj   +1 more source

Screening and epitope characterization of Nidogen‐2‐specific nanobodies

open access: yesFEBS Open Bio, EarlyView.
Camel immunization and phage display were employed to generate high‐affinity VHH nanobodies against Nidogen‐2. After library construction, biopanning, ELISA screening, sequencing, and recombinant expression, selected nanobodies were purified and characterized, leading to the preliminary exploration of a nanobody‐based sandwich ELISA for specific ...
Jianchuan Wen   +9 more
wiley   +1 more source

EDGE TERMINATION AND RESURF TECHNOLOGY IN POWER SILICON CARBIDE DEVICES

open access: yes, 2005
The effect of the electrical field enhancement at the junction discontinuities and its impact on the on-state resistance of power semiconductor devices was investigated.
Sankin, Igor
core  

Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension [PDF]

open access: yesAPL Electronic Devices
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSDs) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky barrier
Advait Gilankar   +8 more
doaj   +1 more source

Factoring, into Edge Transpositions of a Tree, Permutations Fixing a Terminal Vertex

open access: yesJournal of Combinatorial Theory, Series A, 1999
For each edge of a tree \(T\) with vertex set \(X\), we associate an edge-transposition of \(X\) which interchanges the ends of the edge. The set of these transpositions generates the symmetric group on \(X\). Identities for these transpositions, including a set of defining relations, are given.
openaire   +1 more source

Evolutionarily divergent DUF4465 domains have a common vitamin B12‐binding function

open access: yesFEBS Open Bio, EarlyView.
We show that DUF4465 family proteins, widespread across bacteria from gut microbiomes, hydrothermal vents, and soil, share a common vitamin B12‐binding function. These augmented β‐jellyroll proteins bind vitamin B12 via extended loops. Our findings establish sequence‐diverse DUF4465 proteins as a widespread class of B12‐binding proteins, highlighting ...
Charlea Clarke   +4 more
wiley   +1 more source

Design and testing of an innovative slim-edge termination for silicon radiation detectors

open access: yes, 2013
Silicon detectors with reduced or no dead volume along the edges have been attracting a lot of interest in the past few years in many different fields.
Mattedi, Francesca   +7 more
core   +1 more source

YIPFα1A expression is regulated by multilayered molecular mechanisms

open access: yesFEBS Open Bio, EarlyView.
YIPFα1A, a five‐pass Golgi protein, is regulated at multiple layers. (1) Rare‐codon enrichment drives translation‐coupled mRNA decay. (2) A proximal 3′‐UTR element stabilizes mRNA. (3) A distal 3′‐UTR element included by alternate poly(A) site usage represses translation, which can be overridden by the proximal 3′‐UTR element.
Tokio Takaji   +2 more
wiley   +1 more source

Hot Carrier Degradation in Si n-MOSFETs at Cryogenic Temperatures

open access: yesIEEE Journal of the Electron Devices Society
This study experimentally investigated hot carrier degradation (HCD) in Si-MOSFETs at cryogenic temperatures. Stress was applied to the devices at 4 K and 300 K, followed by temperature-dependent characterization from 4 K to 300 K to evaluate the ...
Shunsuke Shitakata   +6 more
doaj   +1 more source

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