Results 221 to 230 of about 37,664 (254)

Edge terminations for SiC high voltage Schottky rectifiers

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002
A study of floating metal field rings (FMRs) and resistive Schottky barrier field plate (RESP) edge terminations for high-voltage silicon carbide (SiC) Schottky barrier diodes (SBD) is reported. For a drift region doping of 2*10/sup 16/ cm/sup -3/, numerical simulations indicated a breakdown voltage for an unterminated diode of about 225 V as compared ...
M. Bhatnagar, H. Nakanishi, S. Bothra, P.K. McLarty, B.J. Baliga   +4 more
openaire   +1 more source

Ferromagnetic Graphene Nanoribbons: Edge Termination with Organic Radicals

The Journal of Physical Chemistry C, 2015
The intramolecular magnetic exchange coupling of edge terminated zigzag graphene nanoribbon (ZGNR) was studied with density functional theory calculations. In order to examine the applicability of the spin alternation rule and a classification scheme for radicals and couplers on functionalized graphene nanoribbons, we investigated the magnetic ...
Daeheum Cho, Kyoung Chul Ko, Heesoo Park, Jin Yong Lee   +3 more
openaire   +1 more source

Planar edge termination for 4H-silicon carbide devices

IEEE Transactions on Electron Devices, 1996
In this paper, it is demonstrated that the edge termination for 6H-SiC based upon self-aligned implantation of a neutral species on the edges of devices to form an amorphous layer can also be applied to 4H-SiC inspite of differences in their band structures.
D. Alok, R. Raghunathan, B.J. Baliga
openaire   +1 more source

A Study on Delaunay Terminal Edge Method

2007
The Delaunay terminal edge algorithm for triangulation improvement proceeds by iterative Lepp selection of a point M which is midpoint of a Delaunay terminal edge in the mesh. The longest edge bisection of the associated terminal triangles (sharing the terminal edge) can be seen as a first step in the Delaunay insertion of M . The method was introduced
openaire   +1 more source

Edge learning using a fully integrated neuro-inspired memristor chip

Science, 2023
, Peng Yao, Bin Gao
exaly  

Effective Edge Termination Design in SiC VJFET

Materials Science Forum, 2005
Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Konstantin Vassilevski, C. Mark Johnson   +5 more
openaire   +1 more source

Oxygen K-edge X-ray Absorption Spectra

Chemical Reviews, 2020
Federica Frati, Myrtille O J Y Hunault, Frank M F De Groot   +2 more
exaly  

A Survey on Mobile Augmented Reality With 5G Mobile Edge Computing: Architectures, Applications, and Technical Aspects

IEEE Communications Surveys and Tutorials, 2021
Yushan Siriwardhana, Pawani Porambage, Madhusanka Liyanage   +2 more
exaly  

Edge Termination Technique for SiC Power Devices

Materials Science Forum, 2004
Hyoung Wook Kim, Wook Bahng, Geun Ho Song, Sang Cheol Kim, Nam Kyun Kim, Eun Dong Kim   +5 more
openaire   +1 more source

Electrically pumped topological laser with valley edge modes

Nature, 2020
Udvas Chattopadhyay, Jinghao Li, Lianhe Li   +2 more
exaly