Results 151 to 160 of about 643 (201)

Electrical Overstress of Integrated Circuits

Microelectronics Reliability, 2014
Abstract Common misconceptions regarding electrical overstress (EOS) and the failure characteristics of integrated circuits (ICs) are summarized, analyzed and clarified. In order to avoid EOS fails right from the beginning of the IC design process, a methodology is proposed that accounts for the special characteristics of ICs and their applications ...
K. T. Kaschani, Reinhold Gärtner
exaly   +2 more sources

What is Electrical Overstress? - Analysis and Conclusions

Microelectronics Reliability, 2015
Abstract In order to analyse the reasons for continuously high failure rates due to electrical overstress (EOS) a large number of publications published over the past 40 years in the field of EOS is investigated and evaluated. It is found that there is no common understanding on EOS.
exaly   +2 more sources

Robustness of electrostatic MEMS actuators against electrical overstress

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference, 2009
The response of electrostatic actuators to electrical overstress is studied in this paper. More specifically, the use of passive components (resistors and capacitors) to diminish the harmful effects of electrical overstress is demonstrated. The influence of these passives on the normal operation of the devices is also studied.
J De Coster, X Rottenberg, H A C Tilmans   +2 more
exaly   +2 more sources

Electrical overstress due to ESD induced displacement currents

Microelectronics Journal, 2005
Abstract In this paper a new failure mode is introduced, which is related to the large d V /d t of ESD pulses. It was observed after +4 kV HBM stress for a 90V-BCD technology device and resulted in a gate oxide defect of a low voltage PMOS transistor, which was hidden deeper in the IC's circuitry.
exaly   +2 more sources

Electrical Overstress (EOS): Challenges for component and system-level co-design

2015 IEEE 11th International Conference on ASIC (ASICON), 2015
Electrical Overstress (EOS) continues to impact semiconductor components and systems as technologies scale from micro-to nano-electronics [1-10]. This paper will teach fundamentals of electrical overstress (EOS) and how to minimize and mitigate EOS failures [1].
Steven H Voldman
exaly   +2 more sources

Electrical overstress and electrostatic discharge

IEEE Transactions on Reliability, 1995
Semiconductor devices have a limited ability to sustain electrical overstress (EOS). The device susceptibility to EOS increases as the device is scaled down to submicron feature size. At present, EOS is a major cause for IC failures. Published reports indicate that nearly 40% of IC failures can be attributed to EOS events.
C. Diaz, S.M. Kang, C. Duvvury
openaire   +1 more source

Thermal failure simulation for electrical overstress in semiconductor devices

1993 IEEE International Symposium on Circuits and Systems, 2002
Electrical overstress (EOS) and electrostatic discharge (ESD) constitute one of the most dominant threats to integrated circuits (ICs). A nonlinear 2-D/1-D thermal simulator suitable for ESD/EOS thermal failure modeling in ICs is reported. The unboundedness of the thermal problem is addressed by a special set of boundary conditions, making the thermal ...
Carlos H. Díaz, Charvaka Duvvury, Sung-Mo Kang   +2 more
openaire   +1 more source

Local electrical overstressing in polymer dielectrics

Russian Physics Journal, 2008
Using a spherical concentric capacitor as a microspike model, the electric field distribution in a polymer dielectric material with shallow and deep electron traps is investigated. It is established that in the course of field emission from microspikes on the electrode and space charge accumulation on the traps, the values of coefficient of electric ...
V. A. Zakrevskii, N. T. Sudar’
openaire   +1 more source

Electrical Overstress in Integrated Circuits

1995
Semiconductor devices have a limited ability to sustain electrical overstress (EOS). The device susceptibility to EOS increases as the device is scaled down to submicron feature sizes. At present, EOS is one of the major causes for IC failures [47,24, 69].
Carlos H. Díaz, Sung-Mo Kang, Charvaka Duvvury   +2 more
openaire   +1 more source