Results 161 to 170 of about 643 (201)
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Data Basing for Electrical Overstress Analysis Support
IEEE Transactions on Nuclear Science, 1983This paper demonstrates how hardware and software advances can radically alter the nature of radiation effects data bases. It also acquaints the reader with the SCORCH data base as a tool for data management in electrical overstress analyses.
David R. Alexander, Robert M. Pelzl
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Electrical Overstress Protection of Submicron Devices.
1984Abstract : The objective of this program was to further define the electical overstress (EOS) sensitivity characterization procedures for microelectric devices and to investigate the EOS sensitivity of micron and submicron linewidth circuit structures.
P. A. Young, R. J. Antinone
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Silicon Solar Cell Damage from Electrical Overstress
IEEE Transactions on Nuclear Science, 1982A model for the prediction of electrical overstress failure in silicon solar cells based on bulk conduction has been developed. The model has been used to predict the threshold failure current versus pulse width for three types of concentrator cells and one flatplate cell.
R. L. Pease +4 more
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Aluminum Interconnect Response to Electrical Overstress
International Symposium for Testing and Failure Analysis, 1998Abstract The response of aluminum interconnect to electrical overstress (EOS) is an important component of semiconductor reliability. Proper modeling of the fusing characteristics are necessary to build more robust circuits without wasting die area and allow estimation of the events that cause failures.
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EOS (Electrical Overstress) – The Old, Unknown Phenomenon?
International Symposium for Testing and Failure Analysis, 2012Abstract Frequently, Electrical Overstress (EOS) is understood in a similar context like Electrostatic Discharge (ESD). However, when looking deeper, only 3-5% of EOS failure signatures are caused by ESD. The dominant root causes can be found on system level – often inaccessible for the device failure analyst.
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Simulation of electrical overstress thermal failures in integrated circuits
IEEE Transactions on Electron Devices, 1994Electrical overstress (EOS) and electrostatic discharge (ESD) pose the most dominant threats to integrated circuits (ICs) reliability. As a measure for EOS/ESD reliability, the power-to-failure versus time-to-failure relationship (power profile) has been recently proposed to determine the EOS failure thresholds of integrated circuits.
C.H. Diaz, null Sung-Mo Kang, C. Duvvury
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Reliability Influences from Electrical Overstress on LSI Devices
18th International Reliability Physics Symposium, 1980Reliability prediction of MOS LSI devices by testing at elevated temperature can be influenced by electrostatic discharge and electrical overstress conditions during the test period. MOS devices that used junction diodes in the input protection structure were found to be more susceptible to failure from electrostatic discharge in 125°C ambient ...
Arthur Hart, Tsuo-Tong Teng, Arn McKenna
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Electrical Overstress Estimation for Printed Circuit Board Design
2020 Annual Reliability and Maintainability Symposium (RAMS), 2020Electronic part failure analysis at early stages of the design reduces design re-spins and time to market. Component failure at later stage of the design costs heavier depending upon in which phase of design cycle the product is. Failure of a small electronic component can cause complete system shutdown.
Taranjit S Kukal +3 more
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The Application of Electrical Overstress Models to Gate Protective Networks
16th International Reliability Physics Symposium, 1978The study of electrical overstress failure in bipolar semiconductor devices from transients induced from nuclear electromagnetic pulses has resulted in: (1) understanding of failure mechanisms, (2) models to predict failure levels, (3) test techniques, and (4) guidance for hardness assurance and reliability of gate input protective networks.
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Specifications for Microcircuit Electrical Overstress Tolerance.
1978Abstract : The objective of this program is to develop an inexpensive electrical overstress quality assurance sample qualification test to be applied to all future Air Force microcircuit purchases. The maximum ratings presently specified refer only to dc limits and do not reflect the ability of a microcircuit to withstand short duration, high amplitude
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