Results 171 to 180 of about 643 (201)

Improved techniques for the electrical overstress protection of communication interfaces

2020
Transient protection is used in electrical and electronic systems primarily to achieve a required level of system reliability - to minimise life cycle cost and maximise system utility. Unfortunately, conventional transient protection techniques do not permit their contribution to system reliability to be confidently assessed.The thesis uses the ...
openaire   +3 more sources

The Characterization of Transistor Electrical Overstress Failure Probability Density Functions

IEEE Transactions on Nuclear Science, 1982
An empirical approach for characterizing transistor emitter-base failure threshold probability density functions is presented. The data analyzed come from a program of experiments designed to test component failures due to electrical overstress transients.
Donald G. Pierce, Robert M. Mason
openaire   +1 more source

Latent effects in digital ICs under electrical overstress pulses

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, 2014
The results of experiments on electrical overstresses (EOS) influence on digital ICs with the amplitude below the threshold of damage are presented. As a result the latent effects of additive nature were found out.
P. K. Skorobogatov, K. A. Epifantsev
openaire   +1 more source

Test method for IC electrical overstress hardness estimation

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294), 2002
A test method to estimate the electrical overstress (EOS) hardness of ICs is presented. It is based on unification of test conditions. The advantage of the method is the possibility it gives to compare the EOS hardness of different ICs. A specialized test installation has been designed to estimate the hardness of different ICs to EOS, including ...
openaire   +1 more source

Electrical Overstress Failure Modeling for Bipolar Semiconductor Components

IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978
Engineering techniques are presented for predicting the failure threshold of bipolar semiconductor components. The failure threshold is expressed in terms of a failure current and failure voltage. Prediction of the failure conditions is based on estimation of background doping concentration and junction area.
openaire   +1 more source

Resilience of tunneling magnetoresistive heads against electrical overstress

Journal of Applied Physics, 2008
The performance of tunneling magnetoresistive (TuMR) heads under electrical overstress and electrostatic discharge is investigated. Alumina-based TuMR longitudinal heads of the 3.5in. 160Gbytes∕platter class are subjected to controlled stress until a predefined level of relative resistance drop (5%–60%) is achieved.
openaire   +1 more source

Electrostatic Discharge and Electrical Overstress

2017
Michael G. Pecht, Riko Radojcic, Gopal Rao   +2 more
openaire   +1 more source

Electrical overstress effect characterization on Power MOS Trenchfet and correlation with time dependent dielectric breakdown

Microelectronics Reliability, 2021
Salvatore Patane
exaly  

Foreword: Electrical overstress/electrostatic discharge

IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part C, 1998
openaire   +1 more source

Unexpected ICD Pulse Generator Failure Due to Electronic Circuit Damage Caused by Electrical Overstress

PACE - Pacing and Clinical Electrophysiology, 2001
Robert G Hauser, Adrian K Almquist, Andrew E Epstein   +2 more
exaly