Results 231 to 240 of about 630,664 (285)

Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide

ACS Nano, 2014
Semiconducting MoS2 monolayers have shown many promising electrical properties, and the inevitable polycrystallinity in synthetic, large-area films renders understanding the effect of structural defects, such as grain boundaries (GBs, or line-defects in two-dimensional materials), essential.
Sina, Najmaei, Matin, Amani, Matthew L, Chin, Zheng, Liu, A Glen, Birdwell, Terrance P, O'Regan, Pulickel M, Ajayan, Madan, Dubey, Jun, Lou   +8 more
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Electrical transport properties of CdTe:Sb films

Crystal Research and Technology, 1987
AbstractHall coefficient and dc conductivity measurements are made on p‐type CdTe:Sb films grown by vacuum evaporation technique on glass substrate. The grain boundary potential barrier, which is found mainly to limit the mobility of carriers is calculated as a function of film thickness.
K. J. Pratap, M. Nagabhushanam, A. Balakamaiah, V. Haei Babu   +3 more
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Electrical transport properties of Dy0.5Gd4.5Si2Ge2

Physica B: Condensed Matter, 2006
Abstract Polycrystalline, Dy0.5Gd4.5Si2Ge2 compound (monoclinic, space group P21/a) has been synthesized and characterized. This compound orders ferromagnetically at ∼210 K (TC) followed by an antiferromagnetic-like transition at ∼21 K (TN). The electrical resistivity, ρ, follows T2 law in the ferromagnetically ordered state indicating the presence ...
R. Nirmala, V. Sankaranarayanan, K. Sethupathi, A.V. Morozkin, Y. Yamamoto, H. Hori   +5 more
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Electrical transport properties of CuWO4

Pramana, 1980
The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO4 have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σI=6.31 × 10−3 exp (−0.29 eV/kT) ohm−1 cm−1 in the temperature range 300–600 K and σII=3.16 × 105 exp ...
R Bharati, R Shanker, R A Singh
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Electrical transport properties of YPd5B3C0.3

Synthetic Metals, 1995
Abstract We have measured the electrical resistivity and the thermoelectric power (TEP) of a superconducting intermetallic compound, YPd 5 B 3 C 0.3 , as a function of temperature between 4K and 300K. The bulk sample was prepared by arc-melting. The electrical resistivity shows quasi linear temperature dependence and drops sharply to zero showing the
CHOI, YS, LEE, DJ, PARK, YW
openaire   +2 more sources

Electrical transport properties of USbSe and USbTe

Journal of Alloys and Compounds, 2005
AbstractFor Abstract see ChemInform Abstract in Full Text.
D. Kaczorowski, A. P. Pikul, A. Zygmunt
openaire   +1 more source

Electrical Transport Properties of Polymorphic MoS₂

ACS Nano, 2016
The engineering of polymorphs in two-dimensional layered materials has recently attracted significant interest. Although the semiconducting (2H) and metallic (1T) phases are known to be stable in thin-film MoTe2, semiconducting 2H-MoS2 is locally converted into metallic 1T-MoS2 through chemical lithiation.
Jun Suk, Kim, Jaesu, Kim, Jiong, Zhao, Sungho, Kim, Jin Hee, Lee, Youngjo, Jin, Homin, Choi, Byoung Hee, Moon, Jung Jun, Bae, Young Hee, Lee, Seong Chu, Lim   +10 more
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Electrical Transport Properties of p-GaN

Japanese Journal of Applied Physics, 1996
Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17 ± 0.01 eV.
Hisashi Nakayama, Peter Hacke, Mohammad Rezaul Huque Khan, Theeradetch Detchprohm, Kazumasa Hiramatsu Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki   +5 more
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Electrical transport properties of manganese selenide

Materials Chemistry and Physics, 1991
Abstract Electrical conductivity, thermoelectric power and dielectric constant of a polycrystalline sample of the antiferromagnetic compound with rock salt structure of MnSe have been measured in the temperature range 300 to 1000 K. It has been found that the dominant charge carriers are holes over the entire temperature range studied. The electrical
M. Prasad, A.K. Pandit, T.H. Ansari, R.A. Singh   +3 more
openaire   +1 more source

Electrical transport properties in calcium films

Thin Solid Films, 1982
Abstract Polycrystalline calcium films obtained by thermal evaporation onto a cooled silica substrate at low temperature in an ultrahigh vacuum system were studied in situ. The temperature was increased to room temperature and then up to 400 K. The electrical resistance of the films was measured by the four-point probe method and the variation with ...
P. Rénucci, L. Gaudart, J.P. Pétrakian, D. Roux   +3 more
openaire   +1 more source