Results 251 to 260 of about 630,664 (285)
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Electrical transport properties of III-nitrides

Materials Science and Engineering: B, 1997
Abstract Excellent n-type GaN layers have been grown by all of the major epitaxial techniques: MBE, MOCVD, and HVPE. In this work, we analyze the band conduction in such samples by temperature-dependent Hall-effect measurement and theory, and determine quantitative information on donor and acceptor concentrations, as well as donor activation energies.
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Electrical transport properties of iron vanadate

Journal of Materials Science Letters, 1986
Mesures de la conductivite electrique ac et dc, du pouvoir thermoelectrique et de la constante dielectrique statique entre 300 et 1000 K; conclusions sur les mecanismes de conduction au-dessus et au-dessous de 500 ...
Shubha Gupta, Y. P. Yadava, R. A. Singh
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Electrical transport properties and crystal structure of LiZnAs

Physical Review B, 1987
The first report on the electrical transport properties of LiZnAs is presented. LiZnAs, which has an antifluorite structure, is a p-type semiconductor with energy band gap of about 1.1 eV. The intrinsic region is found at temperatures above 450 K. The typical resistivity, Hall mobility, and carrier concentration at room temperature are of the order of $
, Kuriyama, , Nakamura
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Electrical transport properties of transition-metal disilicide films

Journal of Applied Physics, 1987
Electrical resistivity in the temperature range of 2–1100 K and Hall-effect measurements from 10 to 300 K of CoSi2, MoSi2, TaSi2, TiSi2, and WSi2 polycrystalline thin films were studied. Structure, composition, and impurities in these films were investigated by a combination of techniques of Rutherford backscattering spectroscopy, x-ray diffraction ...
NAVA F   +4 more
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Electrical Transport Properties of La0.5Sr0.5CrO3 Ceramics

Korean Journal of Materials Research, 2016
The electrical transport properties of below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below , contains a dielectric relaxation process in the tangent loss and electric modulus. The involves the transition from high temperature thermal activated conduction process to low temperature
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Electrical transport properties of nanocrystalline nickel

AIP Conference Proceedings, 2021
Monika Saxena   +2 more
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Electrical Transport Properties of Silicon

1985
W. ROBERT THURBER, JEREMIAH R. LOWNEY
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Electrical transport properties of PbTe films

Solid-State Electronics, 1979
A.L. Dawar   +4 more
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