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Electrical transport properties of YPd5B3C0.3
Synthetic Metals, 1995Abstract We have measured the electrical resistivity and the thermoelectric power (TEP) of a superconducting intermetallic compound, YPd 5 B 3 C 0.3 , as a function of temperature between 4K and 300K. The bulk sample was prepared by arc-melting. The electrical resistivity shows quasi linear temperature dependence and drops sharply to zero showing the
CHOI, YS, LEE, DJ, PARK, YW
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Magnetic and electrical transport properties of
Superconductor Science and Technology, 1997is relatively easily synthesized at temperatures between and for . Magnetization curves show that the strongest Meissner signal and highest occur for x = 1.0, with an intragrain for the material of the order of at 4 K and low field. is found to be the smallest for the x = 1.0 composition with and for the applied field orientation along the ab ...
T P Beales, J D Johnson, J M Parberry
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Electrical transport properties of III-nitrides
Materials Science and Engineering: B, 1997Abstract Excellent n-type GaN layers have been grown by all of the major epitaxial techniques: MBE, MOCVD, and HVPE. In this work, we analyze the band conduction in such samples by temperature-dependent Hall-effect measurement and theory, and determine quantitative information on donor and acceptor concentrations, as well as donor activation energies.
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Electrical transport properties and crystal structure of LiZnAs
Physical Review B, 1987The first report on the electrical transport properties of LiZnAs is presented. LiZnAs, which has an antifluorite structure, is a p-type semiconductor with energy band gap of about 1.1 eV. The intrinsic region is found at temperatures above 450 K. The typical resistivity, Hall mobility, and carrier concentration at room temperature are of the order of $
, Kuriyama, , Nakamura
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Electrical-transport properties in the semimetallic compound LiGa
Physical Review B, 1986The temperature-dependent electrical resistivity above 15 K and the room-temperature Hall coefficient of Li-Ga are presented for five different Li concentrations. The temperature-dependent part of the resistivity is independent of the Li concentration. However, the residual resistivity increases very rapidly with increasing Li concentration.
, Kuriyama, , Volin, , Brun, , Susman
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Electrical Transport Properties of Polymorphic MoS2
ACS Nano, 2016The engineering of polymorphs in two-dimensional layered materials has recently attracted significant interest. Although the semiconducting (2H) and metallic (1T) phases are known to be stable in thin-film MoTe2, semiconducting 2H-MoS2 is locally converted into metallic 1T-MoS2 through chemical lithiation.
Jun Suk, Kim +10 more
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Electrical transport properties of a supramolecular assembly
Inorganic Chemistry Communications, 2001Abstract The direct current conductivity of the urea–[Cu I L 2 ]PF 6 supramolecular assembly ( 1 ) has been measured in the temperature range 24–118°C. It is found that 1 behaves as a semiconductor in 24–33°C, as a metal in 33–63°C and again as a semiconductor in 63–118°C.
Arvind Pan +3 more
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Dielectric and electrical transport properties of biopolymers
SPIE Proceedings, 2007A new capacitive test structure is used to characterize biopolymers at microwave frequencies. The new test structure is comprised of a parallel plate capacitor, combined with coplanar waveguide-based input and output feed lines. This allows electrical measurements to be taken easily under an applied DC electric field and at various temperatures. The
Carrie M. Bartsch +5 more
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Magnetic and electrical transport properties of Ce5RhGe2
Journal of Alloys and Compounds, 2019Abstract We report a comprehensive investigations of the electronic structure and magnetic properties for Ce5RhGe2, that crystallizes in orthorhombic Y2HfS5-type structure. This novel phase was found to be ferromagnetic-type with the Curie temperature T C of 11.5 K in coexistence with spin-glass-like phase, displayed in the magnetic
Paweł Skornia +3 more
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Electrical Transport Properties of p-GaN
Japanese Journal of Applied Physics, 1996Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17 ± 0.01 eV.
Hisashi Nakayama +5 more
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