Results 71 to 80 of about 632,118 (287)

Electrical Transport Properties of Polycrystalline and Amorphous TiO2 Single Nanotubes

, 2017
The electrical transport properties of anodically grown TiO2 nanotubes was investigated. Amorphous nanotubes were anodically grown on titanium foil and transformed through annealing into the anatase phase.
Barzola-Quiquia, Jose, Böttner, Julia, Esquinazi, Pablo, Estrela-Lopis, Irina, Hwang, Imgon, Schmuki, Patrik, So, Seulgi, Stiller, Markus   +7 more
core   +1 more source

Prediction of Surface Topography Parameters in Direct Laser Interference Patterning of Stainless Steel Using Infrared Monitoring and Convolutional Neural Networks

Advanced Engineering Materials, EarlyView.
This study presents an infrared monitoring approach for direct laser interference patterning (DLIP) combined with a convolutional neural network (CNN). Thermal emission data captured during structuring are used to predict surface topography parameters.
Lukas Olawsky, Marcelo Sallese, Leander Kläber, Clemens Kuhn, Keming Du, Andrés Fabián Lasagni   +5 more
wiley   +1 more source

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

AIP Advances, 2014
The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator ...
M. R. Uddin, T. C. Doan, J. Li, K. S. Ziemer, J. Y. Lin, H. X. Jiang   +5 more
doaj   +1 more source

Electrical transport studies of quench condensed Bi films at the initial stage of film growth: Structural transition and the possible formation of electron droplets

, 2001
The electrical transport properties of amorphous Bi films prepared by sequential quench deposition have been studied in situ. A superconductor-insulator (S-I) transition was observed as the film was made increasingly thicker, consistent with previous ...
A. Díaz-Sanchez, A. Vaknin, A.G. Zabrodskii, A.I. Shal’nikov, A.L. Efros, A.L. Efros, A.V. Danilov, A.V. Danilov, B. Weitzel, B.G. Orr, C.C. Yu, C.J. Adkins, C.J. Adkins, D. Monroe, D.B. Haviland, D.S. Fisher, E. Simanek, E. Simanek, E.I. Levin, G. Bergmann, G. Bergmann, G. Martinez-Arizala, G. Martinez-Arizala, H.M. Jaeger, J. Ruiz, J. Shi, J.G. Massey, J.H. Davies, J.H. Davies, K. Binder, K.L. Ekinci, K.L. Ekinci, M. Ben-Chorin, M. M. Rosario, M. Pollak, M.G. Mitch, M.M. Rosario, M.P.A. Fisher, N. Markovic, R.C. Dynes, S. He, S.V. Kravchenko, W. Wu, W. Xue, Y. Liu, Y. Liu, Y.F. Komnik, Z. Ovadyahu   +47 more
core   +1 more source

Interaction between Molten Al‐Killed Mn–B Steel and Carbon‐Bonded MgO Refractories Based on Recyclates

Advanced Engineering Materials, EarlyView.
High‐temperature interactions between low‐sulfur Al‐killed Mn–B steel and MgO–C refractories (0 and 50 wt% recyclates) are studied via finger immersion tests (1600 °C). Surface‐active elements influence infiltration. MgO/CaS layer forms, along with spinel and calcium silicate.
Matheus Roberto Bellé, Lukas Neubert, Anton Yehorov, Till M. J. Stadtmüller, Christos G. Aneziris, Olena Volkova   +5 more
wiley   +1 more source

Electrical transport properties of Si-doped hexagonal boron nitride epilayers

AIP Advances, 2013
The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique.
S. Majety, T. C. Doan, J. Li, J. Y. Lin, H. X. Jiang   +4 more
doaj   +1 more source

Influence of Sample Preparation and Processing Procedures on the Thermal Diffusivity of MgO‐C Refractories

Advanced Engineering Materials, EarlyView.
The thermal diffusivity of MgO‐C refractories is highly sensitive to sample preparation and processing procedures. In this article, the effects of coking sequence, machining conditions, structural inhomogeneity, and graphite coating application on measurements using laser flash apparatus are systematically investigated.
Luyao Pan, Rhena Wulf, Till M. J. Stadtmüller, Christos G. Aneziris, Tobias M. Fieback   +4 more
wiley   +1 more source

p‐Type β‐Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties

Advanced Electronic Materials
This work reports high structural quality and exceptional electrical transport properties of homoepitaxial β‐Ga2O3 thin films grown by Metal–Organic Chemical Vapor Deposition (MOCVD) on (010)‐ and (–201)‐oriented substrates. (010) β‐Ga2O3 samples exhibit
Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez‐Tomás, Ekaterine Chikoidze   +9 more
doaj   +1 more source

Electrical Transport Properties of Multilayered Single-Walled Carbon Nanotube Films

Journal of Nanotechnology, 2012
An improved layer-by-layer vacuum filtration method was adopted for the fabrication of single-walled carbon nanotube (SWCNT) films aiming at a series of SWCNT films with controllable thickness and density.
Yanli Zhao, Wenzhi Li
doaj   +1 more source

Anisotropic, multi-carrier transport at the (111) LaAlO$_3$/SrTiO$_3$ interface

, 2016
The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations.
Ariando, Chandrasekhar, V., Davis, Samuel, Han, K., Huang, Z., Venkatesan, T.   +5 more
core   +1 more source