Results 211 to 220 of about 17,130 (262)

Electrochemical Tunnel Etching of Aluminum

Journal of The Electrochemical Society, 1984
Anodic dissolution of aluminum in hot chloride solutions produces a high density of fine etch tunnels that extend along [100] directions. Tunnels evolve from cubic etch pits when all but one of the pit wall surfaces become passivated; dissolution then occurs at the one active face at a rate that may initially be as high as 20 A/cm2. Tunnels have square
R. S. Alwitt, H. Uchi, T. R. Beck, R. C. Alkire   +3 more
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Electrochemical pore etching in Ge

physica status solidi (a), 2003
61.43.Gt, 68.37.Hk, 81.65.Cf, 82.45.Vp Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n-Ge in different electrolytes was investigated. On rough surfaces pore density increases as the current density increases, whereas on smooth surfaces the situation is inverse, i.e., the pore density increases as the current ...
S. Langa, M. Christophersen, J. Carstensen, I. M. Tiginyanu, H. Föll   +4 more
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Electrochemical etching of full crowns

Australian Dental Journal, 1983
Abstract— The orientation of full crowns in an electrolytic bath during electrochemical etching influences the amount of gold alloy removal. The etching was non‐uniform and the amount removed not proportional with time.
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Machine for electrochemical etch stop

SPIE Proceedings, 2001
The configurations of electrochemical silicon etch-stop are discussed in this paper. An electrochemical etching machine with software and hardware, which can control the etching process of silicon very well, is designed and fabricated bas don the theory of electrochemical etching.
Kun Zhou, Mujie Lan, Weiping Chen, Donghong Wang   +3 more
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Note: Electrochemical etching of sharp iridium tips

Review of Scientific Instruments, 2011
We describe an etching procedure for the production of sharp iridium tips with apex radii of 15–70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success ...
Jean-Benoît, Lalanne, William, Paul, David, Oliver, Peter H, Grütter   +3 more
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Long Germanium Nanowires Prepared by Electrochemical Etching

Nano Letters, 2006
Germanium (Ge) nanowires have been produced by electrochemical etching of single-crystalline n-type Ge [100] in a HCl-containing aqueous electrolyte. Macropores could be etched at various etching currents after an optimized procedure for homogeneous pore nucleation was used.
C, Fang, H, Föll, J, Carstensen
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Ultrasonic characterization of electrochemically etched porous silicon

Japanese Journal of Applied Physics, 2014
This paper presents a non-destructive characterization of porous silicon wafer using ultrasound based on the strong relationship between porosity and acoustical parameters. Transmission coefficients are measured using broadband water immersion method and compared to theoretical ones using a genetic algorithm optimization.
Bustillo, Julien, Fortineau, Jérôme, Gautier, Gaël, Lethiecq, Marc   +3 more
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Electrochemical etching and CV‐profiling of GaN

physica status solidi (c), 2004
We report on the implementation of a robust and reproducible electrochemical CV (ECV) characterization for the (Al,In)GaN material system. A Schottky-like contact is formed by electrolyte, wetting the area of the semiconductor surface delimited by a sealing ring.
T. Wolff, M. Rapp, T. Rotter
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Plasma etched initial pits for electrochemically etched macroporous silicon structures

Journal of Micromechanics and Microengineering, 2001
Macroporous silicon structures of different shapes were prepared by electrochemical etching of n-type silicon in diluted HF under illumination. Depths reaching 80 µm and 40:1 aspect ratios were achieved. A PECVD amorphous silicon layer was used as a masking layer. Undoped amorphous silicon was found to be quite resistant to the HF etching solution. The
Kestutis Grigoras, Antti J Niskanen, Sami Franssila   +2 more
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Nanotips by reverse electrochemical etching

Applied Physics Letters, 1992
A simple, two-stage procedure is shown to produce slender and ultrasharp tungsten tips of nanometer and subnanometer apex dimensions (nanotips). Tip sharpening is achieved by electrochemical etching through bubble dynamics induced by ac voltage in a novel configuration in which the wire end is oriented upward.
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