Results 231 to 240 of about 958,796 (297)

An investigation of the electrochemical etching of

IEEE 4th Technical Digest on Solid-State Sensor and Actuator Workshop, 1990
Results from an investigation of the electrochemical etching of silicon in KOH:H/sub 2/O and CsOH:H/sub 2/O solutions are presented. Current versus voltage (I-V) scans were performed on both n- and p-type silicon as a function of etchant concentration (20-60% by weight KOH and 25-70% by weight CsOH) and temperature (25-80 degrees C). Voltage scans were
V.M. McNeil, S.S. Wang, K.-Y. Ng, M.A. Schmidt   +3 more
openaire   +1 more source

Metal-assisted electrochemical etching of silicon

Nanotechnology, 2010
In this paper the metal-assisted electrochemical etching of silicon is introduced. By electrochemical measurement and sequent simulation, it is revealed that the potential of the valence band maximum at the silicon/metal interface is more negative than that of the silicon/electrolyte interface.
Z P, Huang, N, Geyer, L F, Liu, M Y, Li, P, Zhong   +4 more
openaire   +2 more sources

Electrochemical etching and CV‐profiling of GaN

physica status solidi (c), 2004
We report on the implementation of a robust and reproducible electrochemical CV (ECV) characterization for the (Al,In)GaN material system. A Schottky-like contact is formed by electrolyte, wetting the area of the semiconductor surface delimited by a sealing ring.
T. Wolff, M. Rapp, T. Rotter
openaire   +1 more source

Achieve Superior Electrocatalytic Performance by Surface Copper Vacancy Defects during Electrochemical Etching Process.

Angewandte Chemie, 2020
Vacancy defects of catalyst has been extensively studied and proven to be beneficial to various electrocatalytic reactions. However, it remains a great challenge to systematically study the effects of vacancy defects on the electrocatalytic reaction ...
Niankun Guo, Huiyuan Xue, Amurisana Bao, Zihong Wang, Jing Sun, Tianshan Song, X. Ge, Wei Zhang, Keke Huang, Fengkai He, Qin Wang   +10 more
semanticscholar   +1 more source

Electrochemical etching of macropores in silicon with grooved etch seeds

Semiconductors, 2008
Specific features of macropore formation in n-Si with grooved etch seeds on the surface have been studied. In contrast to point nucleation centers, linear centers form a half-ordered lattice of pores: in the course of the self-organization process, pores randomly originate along the grooves and follow a prescribed period a across the grooves.
E. V. Astrova, A. A. Nechitaĭlov
openaire   +1 more source

Electrochemical etching of silicon carbide

Journal of Solid State Electrochemistry, 1999
Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined.
Horst Sadowski, Reinhard Helbig, Stefan Rysy   +2 more
openaire   +1 more source

Electrochemical etching of MXenes: mechanism, challenges and future outlooks

Journal of Materials Chemistry A
This review focuses on the eco-friendly electrochemical etching synthesis of MXenes and their cutting-edge advancements compared to the conventional strategy, highlighting the innovations, challenges, and future outlooks.
Shaista Nouseen, M. Pumera
semanticscholar   +1 more source

Electrochemical pore etching in germanium

Journal of Electroanalytical Chemistry, 2006
Abstract Nucleation and growth of electrochemically etched pores in Germanium (Ge) was investigated for n- and p-type Ge single crystals with {1 0 0}, {1 1 0}, and {1 1 1} orientations and doping concentrations of (10 14 –10 18 ) cm −3 . Various types of electrolytes, illumination conditions (front side, back side or none), and pre-treatments for ...
C. Fang, H. Föll, J. Carstensen
openaire   +1 more source

Oriented‐Electrochemical Etching of Zn Crystal Edges in Deep Eutectic Solvent for Enhancing Stability and Reversibility of Zn Anodes

Advanced Functional Materials
Metal Zn anode encounters uncontrolled dendrite growth, resulting in poor cycling stability and low coulombic efficiency (CE). Herein, a novel approach for oriented‐electrochemical etching of Zn (ECE‐Zn) in deep eutectic solvent (DES) is presented to ...
Wei Nie, Feng Tian, Le Zhang, Linhui Chang, Qiangchao Sun, Tongdan Duan, Xionggang Lu, Hongwei Cheng   +7 more
semanticscholar   +1 more source

Electrochemical Etching of Silicon by Hydrazine

Journal of The Electrochemical Society, 1993
The anodic dissolution and passivation of n- and -type Si in different concentrations of hydrazine solution and etching temperatures were studied. During etching, performed at 70 and 90 o C, it was observed that the current-potential characteristics for both n- and p-type Si showed a current reduction after reaching a peak value.
Sundaram, K. B., Chang, Hsiao Wei
openaire   +2 more sources