Results 251 to 260 of about 704,286 (307)

Electrochemical etching of macropores in silicon with grooved etch seeds

Semiconductors, 2008
Specific features of macropore formation in n-Si with grooved etch seeds on the surface have been studied. In contrast to point nucleation centers, linear centers form a half-ordered lattice of pores: in the course of the self-organization process, pores randomly originate along the grooves and follow a prescribed period a across the grooves.
E. V. Astrova, A. A. Nechitaĭlov
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Electrochemical pore etching in Ge

Materials Science in Semiconductor Processing, 2006
Abstract While electrochemical pore etching in semiconductors has become a thriving field for research and applications in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a minority carrier diffusion length large enough to enable the use of backside illumination, which has proved to be the ...
F. Cheng, J. Carstensen, H. Föll
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Electrochemical Etching of Silicon by Hydrazine

Journal of The Electrochemical Society, 1993
The anodic dissolution and passivation of n- and -type Si in different concentrations of hydrazine solution and etching temperatures were studied. During etching, performed at 70 and 90 o C, it was observed that the current-potential characteristics for both n- and p-type Si showed a current reduction after reaching a peak value.
Sundaram, K. B., Chang, Hsiao Wei
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Electrochemical Etching of Crystalline Quartz

Electrochemical and Solid-State Letters, 2009
We present a method to electrochemically etch crystalline quartz. Electrochemical etching has not been previously explored as a method for processing quartz because of its insulating nature. By injecting energetic charge carriers into the quartz it can be made temporarily conductive, allowing currents which will affect the chemical etch rate.
E. Rodrigue, V. Kaajakari
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Electrochemical pore etching in Ge

physica status solidi (a), 2003
61.43.Gt, 68.37.Hk, 81.65.Cf, 82.45.Vp Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n-Ge in different electrolytes was investigated. On rough surfaces pore density increases as the current density increases, whereas on smooth surfaces the situation is inverse, i.e., the pore density increases as the current ...
S. Langa, M. Christophersen, J. Carstensen, I. M. Tiginyanu, H. Föll   +4 more
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Electrochemical etching and profiling of silicon

Applied Surface Science, 1993
Abstract The dissolution behavior of silicon under high anodic polarization in buffered electrolyte with low fluoride content (≤ 0.1 mol dm -3 ) has been studied to determine an appropriate etching condition for the depth profiling of silicon structures.
T.S. Horányi, P. Tüttö
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The frequency response of electrochemical etching

Nuclear Tracks and Radiation Measurements (1982), 1982
Abstract The response of electrochemical etching (ECE) in the frequency range up to 1 MHz has been studied. Measurements were made of the track density and the track diameter caused by alpha particles in polycarbonate (PC) samples. The samples of thickness ∽300 μm were irradiated with low-energy alpha particles from a depleted uranium source and then
C.F. Wong, L. Tommasino
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Electrochemical local etching of silicon in etchant vapor

Nanoscale, 2020
Electrochemical local etching of Si by applying an electric field and condensing etchant meniscus.
Bugeun Ki, Keorock Choi, Kyunghwan Kim, Jungwoo Oh   +3 more
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Electrochemical Tunnel Etching of Aluminum

Journal of The Electrochemical Society, 1984
Anodic dissolution of aluminum in hot chloride solutions produces a high density of fine etch tunnels that extend along [100] directions. Tunnels evolve from cubic etch pits when all but one of the pit wall surfaces become passivated; dissolution then occurs at the one active face at a rate that may initially be as high as 20 A/cm2. Tunnels have square
R. S. Alwitt, H. Uchi, T. R. Beck, R. C. Alkire   +3 more
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Electrochemical etching of silicon carbide

Journal of Solid State Electrochemistry, 1999
Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined.
Horst Sadowski, Reinhard Helbig, Stefan Rysy   +2 more
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