Results 241 to 250 of about 704,286 (307)
Tailoring MXene Surface Chemistry: Strategies, Mechanisms, and Functional Applications. [PDF]
Liu Z, Cui Y, Sun Y, Pan C.
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Green Synthesis of MXenes: Sustainable Pathways, Enhanced Properties, and Application Prospects. [PDF]
Javed M +7 more
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In Situ Process Control during Wet-Chemical Etching of Heteroepitaxial III-V Layers Using Reflection Anisotropy Spectroscopy. [PDF]
Schmitt EA +7 more
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Electrochimica Acta, 1983
Silver faces with only a few exactly known dislocation emergence points were etched electrochemically. Deep pyramidal etch pits were observed on the screw dislocations whereas flat-bottomed pits arise on the edge dislocations. Qualitatively, this fact corresponds to the results obtained with natural, i.e. as-grown from the vapour phase, {0001}-faces of
Chr Nanev, K. Dicheva
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Silver faces with only a few exactly known dislocation emergence points were etched electrochemically. Deep pyramidal etch pits were observed on the screw dislocations whereas flat-bottomed pits arise on the edge dislocations. Qualitatively, this fact corresponds to the results obtained with natural, i.e. as-grown from the vapour phase, {0001}-faces of
Chr Nanev, K. Dicheva
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Electrochemical etching of CR-39
Nuclear Tracks, 1981ABSTRACT An extensive study of the ECE of CR-39 has been carried out. The influence of various parameters such as temperature, reagent concentration, frequency, field strength, pre-etching… is reported.
Lferde, Z., Monnin, M.
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An investigation of the electrochemical etching of
IEEE 4th Technical Digest on Solid-State Sensor and Actuator Workshop, 1990Results from an investigation of the electrochemical etching of silicon in KOH:H/sub 2/O and CsOH:H/sub 2/O solutions are presented. Current versus voltage (I-V) scans were performed on both n- and p-type silicon as a function of etchant concentration (20-60% by weight KOH and 25-70% by weight CsOH) and temperature (25-80 degrees C). Voltage scans were
V.M. McNeil +3 more
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The Electrochemical Etching of Metals
Journal of Electrochemistry, 2002All kinds of current methods for etching metals are reviewed. The electrochemical etching methods among them, including through-mask, scanning electrochemical microscopy, confined etchant layer technique, electrochemical scanning tunneling microscopy and super-short potential pulse, are discussed in detail.
Li-min JIANG +5 more
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Metal-assisted electrochemical etching of silicon
Nanotechnology, 2010In this paper the metal-assisted electrochemical etching of silicon is introduced. By electrochemical measurement and sequent simulation, it is revealed that the potential of the valence band maximum at the silicon/metal interface is more negative than that of the silicon/electrolyte interface.
Z P, Huang +4 more
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Electrochemical etching and CV‐profiling of GaN
physica status solidi (c), 2004We report on the implementation of a robust and reproducible electrochemical CV (ECV) characterization for the (Al,In)GaN material system. A Schottky-like contact is formed by electrolyte, wetting the area of the semiconductor surface delimited by a sealing ring.
T. Wolff, M. Rapp, T. Rotter
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Electrochemical etching of full crowns
Australian Dental Journal, 1983Abstract— The orientation of full crowns in an electrolytic bath during electrochemical etching influences the amount of gold alloy removal. The etching was non‐uniform and the amount removed not proportional with time.
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