Results 241 to 250 of about 958,796 (297)
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Electrochimica Acta, 2020
Through-mask electrochemical etching (TMEE) is one of the main methods to fabricate metal microstructures array in large scale. In deep metal microstructure etching process, lateral corrosion problem seriously affects the etching localization.
Ke Zhai, Liqun Du, Junshan Liu
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Through-mask electrochemical etching (TMEE) is one of the main methods to fabricate metal microstructures array in large scale. In deep metal microstructure etching process, lateral corrosion problem seriously affects the etching localization.
Ke Zhai, Liqun Du, Junshan Liu
exaly +2 more sources
Electrochemical etching of full crowns
Australian Dental Journal, 1983Abstract— The orientation of full crowns in an electrolytic bath during electrochemical etching influences the amount of gold alloy removal. The etching was non‐uniform and the amount removed not proportional with time.
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Fuel Cells, 2020
Porous silicon (PSi) was fabricated based on anodic electrochemical etching, and the relationship between preparation conditions, nanostructure and PSi surface crack behavior were systematically studied.
X. Yang +8 more
semanticscholar +1 more source
Porous silicon (PSi) was fabricated based on anodic electrochemical etching, and the relationship between preparation conditions, nanostructure and PSi surface crack behavior were systematically studied.
X. Yang +8 more
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Electrochemical Etching of Crystalline Quartz
Electrochemical and Solid-State Letters, 2009We present a method to electrochemically etch crystalline quartz. Electrochemical etching has not been previously explored as a method for processing quartz because of its insulating nature. By injecting energetic charge carriers into the quartz it can be made temporarily conductive, allowing currents which will affect the chemical etch rate.
E. Rodrigue, V. Kaajakari
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Electrochemical local etching of silicon in etchant vapor
Nanoscale, 2020Electrochemical local etching of Si by applying an electric field and condensing etchant meniscus.
Bugeun Ki +3 more
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Electrochemical pore etching in Ge
physica status solidi (a), 200361.43.Gt, 68.37.Hk, 81.65.Cf, 82.45.Vp Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n-Ge in different electrolytes was investigated. On rough surfaces pore density increases as the current density increases, whereas on smooth surfaces the situation is inverse, i.e., the pore density increases as the current ...
S. Langa +4 more
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Electrochemical etching and profiling of silicon
Applied Surface Science, 1993Abstract The dissolution behavior of silicon under high anodic polarization in buffered electrolyte with low fluoride content (≤ 0.1 mol dm -3 ) has been studied to determine an appropriate etching condition for the depth profiling of silicon structures.
T.S. Horányi, P. Tüttö
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The frequency response of electrochemical etching
Nuclear Tracks and Radiation Measurements (1982), 1982Abstract The response of electrochemical etching (ECE) in the frequency range up to 1 MHz has been studied. Measurements were made of the track density and the track diameter caused by alpha particles in polycarbonate (PC) samples. The samples of thickness ∽300 μm were irradiated with low-energy alpha particles from a depleted uranium source and then
C.F. Wong, L. Tommasino
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Electrochemical pore etching in Ge
Materials Science in Semiconductor Processing, 2006Abstract While electrochemical pore etching in semiconductors has become a thriving field for research and applications in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a minority carrier diffusion length large enough to enable the use of backside illumination, which has proved to be the ...
F. Cheng, J. Carstensen, H. Föll
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Experimental study on electrochemical etching for titanium printed circuit heat exchanger channels
, 2020Printed circuit heat exchangers (PCHEs) have attracted wide attention in the nuclear energy field owing to their high compactness, strong pressure endurance, and high heat transfer capacity.
Tianrui Deng +4 more
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