Results 271 to 280 of about 848,999 (311)

Note: Electrochemical etching of sharp iridium tips

Review of Scientific Instruments, 2011
We describe an etching procedure for the production of sharp iridium tips with apex radii of 15–70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success ...
Jean-Benoît, Lalanne, William, Paul, David, Oliver, Peter H, Grütter   +3 more
openaire   +2 more sources

Long Germanium Nanowires Prepared by Electrochemical Etching

Nano Letters, 2006
Germanium (Ge) nanowires have been produced by electrochemical etching of single-crystalline n-type Ge [100] in a HCl-containing aqueous electrolyte. Macropores could be etched at various etching currents after an optimized procedure for homogeneous pore nucleation was used.
C, Fang, H, Föll, J, Carstensen
openaire   +2 more sources

Ultrasonic characterization of electrochemically etched porous silicon

Japanese Journal of Applied Physics, 2014
This paper presents a non-destructive characterization of porous silicon wafer using ultrasound based on the strong relationship between porosity and acoustical parameters. Transmission coefficients are measured using broadband water immersion method and compared to theoretical ones using a genetic algorithm optimization.
Bustillo, Julien, Fortineau, Jérôme, Gautier, Gaël, Lethiecq, Marc   +3 more
openaire   +3 more sources

Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching

Applied Physics Express, 2020
We fabricated texture structures on the 3C-SiC surface for improvement of photocathode performance by electrochemical etching. After the electrochemical etching, surface roughness of 3C-SiC increased without point defect introduction because of ...
M. Kato, Tomohiro Ambe
semanticscholar   +1 more source

Electrochemical etching and CV‐profiling of GaN

physica status solidi (c), 2004
We report on the implementation of a robust and reproducible electrochemical CV (ECV) characterization for the (Al,In)GaN material system. A Schottky-like contact is formed by electrolyte, wetting the area of the semiconductor surface delimited by a sealing ring.
T. Wolff, M. Rapp, T. Rotter
openaire   +1 more source

Plasma etched initial pits for electrochemically etched macroporous silicon structures

Journal of Micromechanics and Microengineering, 2001
Macroporous silicon structures of different shapes were prepared by electrochemical etching of n-type silicon in diluted HF under illumination. Depths reaching 80 µm and 40:1 aspect ratios were achieved. A PECVD amorphous silicon layer was used as a masking layer. Undoped amorphous silicon was found to be quite resistant to the HF etching solution. The
Kestutis Grigoras, Antti J Niskanen, Sami Franssila   +2 more
openaire   +1 more source

Nanotips by reverse electrochemical etching

Applied Physics Letters, 1992
A simple, two-stage procedure is shown to produce slender and ultrasharp tungsten tips of nanometer and subnanometer apex dimensions (nanotips). Tip sharpening is achieved by electrochemical etching through bubble dynamics induced by ac voltage in a novel configuration in which the wire end is oriented upward.
openaire   +1 more source

ELECTROCHEMICAL ETCHING REGISTRATION AND TRACK FORMATION TIME

Nuclear Tracks, 1981
ABSTRACT The registration efficiency of electrochemically etched nuclear track detectors is highly dependent on the track-formation time. Surface defects leading to background spots start forming trees since the beginning of the etching and they may propagate extensively if the track formation is not fast enough.
G. Espinosa Garcia, J.I. Galzarri, L. Tommasino, F. Raponi   +3 more
openaire   +1 more source

Electrochemical etching of macropores in silicon with grooved etch seeds

Semiconductors, 2008
Specific features of macropore formation in n-Si with grooved etch seeds on the surface have been studied. In contrast to point nucleation centers, linear centers form a half-ordered lattice of pores: in the course of the self-organization process, pores randomly originate along the grooves and follow a prescribed period a across the grooves.
E. V. Astrova, A. A. Nechitaĭlov
openaire   +1 more source

Intermediate Structures of Pt-Ni Nanoparticles during Selective Chemical and Electrochemical Etching.

Journal of Physical Chemistry Letters, 2019
Both chemical and electrochemical etching are effective methods for tailoring the surface composition of Pt-based catalytic bimetallic nanoparticles (NPs).
S. Tan, See Wee Chee, Z. Baraissov, Hongmei Jin, T. L. Tan, U. Mirsaidov   +5 more
semanticscholar   +1 more source