Results 131 to 140 of about 4,947,670 (279)

A Programmable Semiconductor Containing Active Molecular Photoswitches Located in the Crystal's Volume Phase

open access: yesAdvanced Functional Materials, EarlyView.
A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske   +4 more
wiley   +1 more source

The Development of Temporal Memory for Complex Events. [PDF]

open access: yesDev Sci
Frisoni M   +4 more
europepmc   +1 more source

Coherent Control of Nitrogen Nuclear Spins via the VB−${\rm V}_B^-$‐Center in Hexagonal Boron Nitride

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates coherent control of 15N nuclear spins coupled to VB−${\text{V}}_{\text{B}}^{-}$ centers in isotope‐enriched hexagonal boron nitride. Selective addressing via spin‐state mixing enables Rabi driving, quantum gates, and coherence times exceeding 10 μs$\umu{\rm s}$.
Adalbert Tibiássy   +6 more
wiley   +1 more source

Digital Actuation Control of Soft Robotic Origami With Self‐Folding Liquid Crystal Elastomer Hinges

open access: yesAdvanced Functional Materials, EarlyView.
Self‐folding soft‐rigid hybrid robotic origami is enabled by liquid crystal elastomer actuators with embedded Joule heating and closed‐loop digital control. Digitally addressable hinges provide reversible and programmable transitions between distinct folded states while maintaining actuation performance at high cycle counts (over 1500).
David C. Bershadsky   +3 more
wiley   +1 more source

Near‐Infrared Light‐Programmable Negative Differential Transconductance in Organic Electrochemical Transistors for Reconfigurable Logic

open access: yesAdvanced Functional Materials, EarlyView.
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi   +7 more
wiley   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

open access: yesAdvanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa   +6 more
wiley   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann   +8 more
wiley   +1 more source

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

open access: yesAdvanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante   +17 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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