Results 171 to 180 of about 99,173 (297)

Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes. [PDF]

Materials (Basel), 2023
Park AH, Seo TH.
europepmc   +1 more source

Single‐Crystalline Borate Covalent Organic Frameworks for Solid‐State Lithium Metal Batteries

Advanced Science, EarlyView.
Advancing lithium metal batteries demands novel solid‐state electrolytes. Covalent organic frameworks (COFs) offer high ion conduction via porosity and functional groups. We synthesized single‐crystalline 3D borate COF with 8.1 mS cm−1 conductivity and 0.98 Li+ transference.
Ye Tian, Xiaolong Cheng, Lei Cheng, Yide Chang, Jixin Wu, Muhua Gu, Ki‐Taek Bang, Rui Wang, Ran Tao, Yufeng Wang, Soonyong So, Yanming Wang, Yoonseob Kim   +12 more
wiley   +1 more source

Epitaxial Growth of Large-Scale α-Phase Antimonene. [PDF]

Nano Lett
Jaroch T, Żurawek-Wyczesany L, Stȩpniak-Dybala A, Krawiec M, Kopciuszyński M, Dróżdż P, Gołȩbiowski M, Zdyb R.   +7 more
europepmc   +1 more source

Magnetic and Crystal Symmetry Control on Spin Hall Conductivity in Altermagnets

Advanced Science, EarlyView.
Crystal structures and schematic illustrations of the spin Hall effect (SHE) in altermagnets. High‐symmetry RuO2 exhibits conventional SHE, while tilted RuO2 shows trivial unconventional SHE (USHE) caused by structural tilting. CrSb and MnTe, with reduced magnetic symmetry, display intrinsic USHE arising from symmetry‐driven spin–momentum locking ...
Dameul Jeong, Seoung‐Hun Kang, Young‐Kyun Kwon   +2 more
wiley   +1 more source

Van der Waals epitaxial growth of single-crystal molecular film. [PDF]

Natl Sci Rev
Liu L, Gong P, Liu K, Huang B, Zhang Z, Fu Y, Wu Y, Zhao Y, Wang M, Xu Y, Li H, Zhai T.   +11 more
europepmc   +1 more source

Tailoring the epitaxial growth of oriented Te nanoribbon arrays. [PDF]

iScience, 2023
Li J, Zhang J, Chu J, Yang L, Zhao X, Zhang Y, Liu T, Lu Y, Chen C, Hou X, Fang L, Xu Y, Wang J, Zhang K.   +13 more
europepmc   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

Advanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz, Matilde Siviero, Lucas Lesourd, Eric Frayssinet, Sebastien Chenot, Petter Hofverberg, Sullivan Marafico, Marie Vidal, Maxime Hugues   +8 more
wiley   +1 more source

Molecular Beam Epitaxial Growth and Optical Properties of InN Nanostructures on Large Lattice-Mismatched Substrates. [PDF]

Materials (Basel)
Nie R, Hu Y, Wu G, Li Y, Chen Y, Nie H, Wang X, Ren M, Li G, Zhang Y, Zhang B.   +10 more
europepmc   +1 more source

Epitaxial growth and structural properties of silicene and other 2D allotropes of Si. [PDF]

Nanoscale Adv, 2023
Masson L, Prévot G.
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source