Results 191 to 200 of about 28,001 (312)

Growth‐Pathway‐Controlled van der Waals Epitaxy of Phase‐Selective Tin Sulfides

Advanced Science, EarlyView.
Growth‐pathway‐controlled van der Waals epitaxy enables deterministic phase selection and strain engineering in tin sulfide/WSe2 heterostructures. Direct growth of SnS induces substrate‐mediated strain and phase evolution, whereas sequential growth through an SnS2 buffer suppresses strain transfer and stabilizes pristine α‐SnS, revealing a versatile ...
Jaehyeok Lee, Jinwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Fast-Recovery Epitaxial NbN Superconducting Nanowire Single-Photon Detectors with Saturated Efficiency at 1550 nm in Liquid Helium. [PDF]

Nano Lett
Incalza F, Castellani M, Joti Paul D, Simon A, Batson E, Mondin D, Medeiros O, Berggren KK.   +7 more
europepmc   +1 more source

Carboxylate‐Driven Metal Pre‑Fixation COF@MOF Synthesis: Enabling Tailored Structural, Dimensional, and Defect Engineering

Advanced Science, EarlyView.
A universal metal pre‐fixation (MPF) strategy directs the precise crystallization of diverse metal‐organic frameworks (Co‐MOF, ZIF‐8, Fe‐MOF, UIO‐66) on covalent organic framework (PY‐COF) scaffolds. The resulting hierarchical hybrids exhibit tunable porosity, structural defective and dimensional, as well as enhanced performance in CH4/C2H6/C3H8 ...
Ying Zhao, Dongmei Chen, Huilin Zheng, Min Chen, Dingtang Li, Shuyu Xie   +5 more
wiley   +1 more source

Epitaxial n-ZnO/MoS₂/p-GaN Heterostructure Light-Emitting Diodes. [PDF]

Nano Lett
Rahmatulloh I, Dalayoan DJC, Ali A, Shin S, Nguyen ATD, Kwon T, Behera S, Lee J, Kim H, Jeong HY, Namgung S, Yi GC, Chung K.   +12 more
europepmc   +1 more source

Chiral‐Induced Spin Selectivity Effect in a 1 nm Thin 1,1′‐Binaphthyl‐2,2′‐diyl Hydrogenphosphate Self‐Assembled Monolayer on Nickel Oxide

Advanced Science, EarlyView.
A self‐assembled monolayer (≈0.9 nm) of an axially chiral binaphthol phosphoric acid derivative on a ferromagnetic Ni/NiOx substrate shows chiral‐induced spin selectivity (CISS) magnetoresistance of 50%–80%. This thermally and chemically robust functional stack shows the way towards practical spintronic devices based on the CISS effect.
Abin Nas Nalakath, Christian Pfeiffer, Anu Gupta, Franziska Schölzel, Michael Zharnikov, Georgeta Salvan, Ron Naaman, Marc Tornow, Peer Kirsch   +8 more
wiley   +1 more source

Controlled Epitaxial Growth of Perovskite Single-Crystal Heterojunction Arrays for Self-Powered Imaging. [PDF]

Nanomicro Lett
Lu H, Yu Y, Wu W, He Z, Hu K, Yang W, Han X, Pan C.   +7 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Polycrystalline κ-Ga₂O₃ on Si(100) substrates with GZO buffer layers. [PDF]

RSC Adv
Hirai Y, Wai HS, Kawaharamura T, Ikenaga N, Ueda O, Nishinaka H.   +5 more
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source