Results 1 to 10 of about 14,103 (165)

Epitaxial growth of a silicene sheet

open access: yesApplied Physics Letters, 2010
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions.
Sébastien Vizzini   +2 more
exaly   +6 more sources

Epitaxial Growth of Ga2O3: A Review. [PDF]

open access: yesMaterials (Basel)
Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics.
Rahaman I   +8 more
europepmc   +3 more sources

Visualizing the interfacial-layer-based epitaxial growth process toward organic core-shell architectures [PDF]

open access: yesNature Communications
Organic heterostructures (OHTs) with the desired geometry organization on micro/nanoscale have undergone rapid progress in nanoscience and nanotechnology.
Ming-Peng Zhuo   +10 more
doaj   +2 more sources

Controlled formation of three-dimensional cavities during lateral epitaxial growth [PDF]

open access: yesNature Communications
Epitaxial growth is a fundamental step required to create devices for the semiconductor industry, enabling different materials to be combined in layers with precise control of strain and defect structure.
Yiwen Zhang   +6 more
doaj   +2 more sources

A model for changing the technological process for the growth of epitaxial layers by means of the heating of the growth zone [PDF]

open access: yesComputer Methods in Materials Science, 2021
The nonstationary transfer of heat during epitaxial layer growth in gas phase epitaxy reactors is analyzed within the work. Based on this analysis, several recommendations on the organization of the heating of the growth zone to increase the homogeneity ...
Evgeny L. Pankratov
doaj   +1 more source

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

open access: yesCrystals, 2022
Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root mean ...
Jiulong Wang   +6 more
doaj   +1 more source

Microstructure and mechanical properties of laser-assisted epitaxial growth of nickel-based single crystal superalloys

open access: yesJournal of Materials Research and Technology, 2023
The effects of process parameters on the microstructures and properties of the laser-assisted epitaxial growth layer are of great significance for the repair of nickel-based single-crystal blades. This work investigated the microstructures and properties
Jinjun Xu   +7 more
doaj   +1 more source

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

open access: yesNature Communications, 2023
Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications.
Li Zhai   +31 more
doaj   +1 more source

Optimizing process for pulsed laser additive manufacturing of nickel-based single crystal superalloy

open access: yesMaterials Research Express, 2023
The relationship between pulsed laser processing parameters and epitaxial growth of alloy is essential to additive manufacturing technology in repairing and manufacturing nickel-based single crystal (SX) superalloys. In this paper, orthogonal experiments
Shiwei Ci   +5 more
doaj   +1 more source

Direct Epitaxial Growth of Polar Hf0.5Zr0.5O2 Films on Corundum

open access: yesNanomaterials, 2022
Single-phase epitaxial Hf0.5Zr0.5O2 films with non-centrosymmetric orthorhombic structure have been grown directly on electrode-free corundum (α-Al2O3) substrates by pulsed laser deposition.
Eduardo Barriuso   +8 more
doaj   +1 more source

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