Results 41 to 50 of about 39,172 (265)

Growth of High Quality Epitaxial Rhombohedral Boron Nitride

, 2012
Epitaxial growth of sp(2)-hybridized boron nitride (sp(2) BN) films on sapphire substrates is demonstrated in a hot wall chemical vapor deposition reactor at the temperature of 1500 degrees C, using triethyl boron and ammonia as precursors. The influence
Henry, Anne,, Högberg, Hans,, Jensen, Jens,, Pedersen, Henrik,, Chubarov, Mikhail,   +4 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Spontaneous Seed Formation During Electrodeposition Drives Epitaxial Growth of Metastable Bismuth Selenide Microcrystals

, 2022
Materials with metastable phases can exhibit vastly different properties from their thermodynamically favored counterparts. Methods to synthesize metastable phases without the need for high-temperature or high-pressure conditions would facilitate their ...
Brandon, Campbell, Bryce, Sadtler, Dongyan, Zhang, Tengfei, Cao, Rohan, Mishra, Jiang , Luo, Guodong, Ren   +6 more
core   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Epitaxial growth of non-polar a-plane ZnO and aluminium-doped ZnO on r-sapphire using the intermittent spray pyrolysis methodology

Applied Surface Science Advances
In this article, we highlight the epitaxial growth of non-polar a-plane ZnO and aluminium-doped ZnO using the low-cost, non-vacuum and highly up-scalable intermittent spray pyrolysis technique.
Cerine Treesa Russel, Carmen Martinez Tomas, Vicente Muñoz Sanjosé   +2 more
doaj   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

COMPUTER IMPLEMENTATION OF MASS TRANSPORT IN MATLAB ENVIRONMENT FOR MODELING EPITAXIAL GROWTH PROCESS WITH MOVING BOUNDARY PROBLEM

TASK Quarterly, 2015
Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry.
SLAWOMIR GULKOWSKI
doaj   +1 more source

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

Applied Physics Express, 2023
ScAlN has garnered substantial attention for its robust piezoelectric and ferroelectric properties, holding promise for diverse electronic device applications.
Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Tomoya Okuda, Kohei Ueno, Hiroshi Fujioka   +5 more
doaj   +1 more source

Epitaxial growth of ferroelectric oxide filmsl

, 2006
This review paper begins with a brief overview of the most common ferroelectric materials, the perovskites and the Aurivillius families. The epitaxial growth of ferroelectric epitaxial films can be a viable approach to improve the ferroelectric ...
FORNARI, Roberto, J. Schwarzkopf
core   +1 more source