Results 31 to 40 of about 5,045,647 (235)

Directly seeding epitaxial growth of tungsten oxides/tungsten diselenide mixed-dimensional heterostructures with excellent optical properties

iScience, 2023
Summary: Mixed-dimensional heterostructures have drawn significant attention due to their intriguing physical properties and potential applications in electronic and optoelectronic nanodevices. However, limited by the lattice matching, the preparation of
Xiang Chen, Yaqing Zhang, Xinxin Yue, Zhuanzhuan Huang, Lifu Zhang, Min Feng, Fang Liu, Cuntao Gao, Yuan Yan, Xuewen Fu   +9 more
doaj   +1 more source

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Nanomaterials, 2022
Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology ...
Yong Du, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang, Henry H. Radamson   +8 more
doaj   +1 more source

High‐Temperature Phase Transformation in a V‐9Si‐6.5B Alloy: The Kinetic and Crystallographic Pathway From V5SiB2 to V8SiB4

Advanced Engineering Materials, EarlyView.
In situ synchrotron high‐energy X‐ray diffraction reveals the real‐time high‐temperature phase evolution of a ternary V‐9Si‐6.5B alloy. The study uncovers a kinetically delayed V5SiB2 → V8SiB4 transformation governed by massive structural and chemical barriers.
Zahra Sabeti, Andreas Stark, Roja Rani Korrayi, Florian Pyczak, Georg Hasemann   +4 more
wiley   +1 more source

(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD

Journal of Materiomics
In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed.
Yunlong He, Yang Liu, Xiaoli Lu, Zhan Wang, Xianqiang Song, Ying Zhou, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +8 more
doaj   +1 more source

High‐Entropy Alloy Interlayers Toward Advanced Joining for High‐Performance Structural Applications: Current Progress and Emerging Challenges

Advanced Engineering Materials, EarlyView.
HEA interlayers offer a versatile route for joining high‐performance structural materials. Their compositional and structural design regulates interfacial reactions, suppresses brittle IMCs, and improves metallurgical bonding. Sandwich interlayers further integrate defect healing with precipitation strengthening, enabling improved strength–ductility ...
Lin Yuan, Jiafen Song, Jinglong Li, Jiangtao Xiong, Tao Yang   +4 more
wiley   +1 more source

Epitaxial growth of SiC on complex substrates [PDF]

, 2001
Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study.
Zhang FF, Luo MC, Sun GS, Lin LY, Li JM, Sun GS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China., Zhu SR, Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China., Wang L   +8 more
core  

Determinants of mandibular form and growth : proceedings of a sponsored symposium honoring Professor Robert E. Moyers held February 21 and 22, 1975, in Ann Arbor, Michigan

, 1975
http://babel.hathitrust.org/cgi/pt?id=mdp.39015007427209;view=2up;ui=fullscreen#page/n0/mode ...
Symposium on Craniofacial Growth
core   +7 more sources

Impact of the Process Atmosphere During Hot Isostatic Pressing on the Near‐Surface Composition of an Additively Manufactured Austenitic High‐Interstitial Steel

Advanced Engineering Materials, EarlyView.
A high interstital austenitic steel is additively manufactured and postdensified by HIP to eliminate gas porosity. Thereby, the loss of N and Mn in Ar HIP atmosphere is investigated. Further, HIP using N2 atmosphere is investigated which led to excessive nitride formation.
F. Großwendt, J. Hahn, J. Kimm, S. Weber, J. Lentz   +4 more
wiley   +1 more source

Mitigating Creep Anisotropy and Enhancing Performance in Additively Manufactured Ni‐Based Superalloys: A Review

Advanced Engineering Materials, EarlyView.
Additive manufacturing introduces pronounced microstructural and crystallographic anisotropy in Ni‐based superalloys, resulting in orientation‐dependent creep deformation and damage. This review identifies the key microstructural origins of creep anisotropy, examines their influence on dominant deformation mechanisms, and highlights processing ...
Chandan Kumar, Shobhit Pratap Singh, Gaurav Mohanty, Praveen Kumar   +3 more
wiley   +1 more source

Research on the effect of remelting on the epitaxial growth process of single crystal superalloy

Journal of Materials Research and Technology
In this paper, the remelting process is applied to Laser Directed Energy Deposition (L-DED) to repair single crystal superalloys. The main formation modes of stray grains in single crystal epitaxial growth were analyzed, and the inhibitory effect of ...
Gengshuo Liu, Shujie Liu, Tinghong Hou, jinyan Hu, Guanqun Du, Shuai Lv, Yu Wang, Weiwei Liu, Tao Li   +8 more
doaj   +1 more source