Results 31 to 40 of about 100,599 (299)
Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots
, 2011 Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth orientation on the ...
Floro, Jerrold A., Petz, Christopher W.
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Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
Nanomaterials, 2022 Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology ...
Yong Du +8 more
doaj +1 more source
(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD
Journal of MateriomicsIn this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed.
Yunlong He +8 more
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Island Distance in One-Dimensional Epitaxial Growth
, 1998 The typical island distance $\ell$ in submonlayer epitaxial growth depends on the growth conditions via an exponent $\gamma$. This exponent is known to depend on the substrate dimensionality, the dimension of the islands, and the size $i^*$ of the ...
Kallabis, Harald +2 more
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Advanced Engineering Materials, EarlyView.This study demonstrates how optimizing laser power, scanning speed, and hatching distance in laser powder bed fusion can boost the productivity of Inconel 718 manufacturing by up to 29% while maintaining mechanical integrity. The work delivers a validated process window and cost–time analysis, offering industry‐ready guidelines for efficient additive ...
Amir Behjat +7 more
wiley +1 more source
, 2018 Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to ...
Akansel, Serkan +9 more
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Deterministic Detection of Single Ion Implantation
Advanced Engineering Materials, EarlyView.Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead +6 more
wiley +1 more source
Research on the effect of remelting on the epitaxial growth process of single crystal superalloy
Journal of Materials Research and TechnologyIn this paper, the remelting process is applied to Laser Directed Energy Deposition (L-DED) to repair single crystal superalloys. The main formation modes of stray grains in single crystal epitaxial growth were analyzed, and the inhibitory effect of ...
Gengshuo Liu +8 more
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Kinetically-controlled thin-film growth of layered $\beta$- and $\gamma-$Na$_{x}$CoO$_{2}$ cobaltate
, 2005 We report growth characteristics of epitaxial $\beta$-Na$_{0.6}$CoO$_{2}$ and $\gamma$-Na$_{0.7}$CoO$_{2}$ thin films on (001) sapphire substrates grown by pulsed-laser deposition.
Cho, J. H., Kim, Bog G., Son, J. Y.
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Advanced Functional Materials, EarlyView.The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu +2 more
wiley +1 more source