Results 31 to 40 of about 39,172 (265)
Summary: Mixed-dimensional heterostructures have drawn significant attention due to their intriguing physical properties and potential applications in electronic and optoelectronic nanodevices. However, limited by the lattice matching, the preparation of
Xiang Chen +9 more
doaj +1 more source
Molecular beam epitaxial growth of Bi2Se3 nanowires and nanoflakes
Topological Insulators are in focus of immense research efforts and rapid scientific progress is obtained in that field. Bi2Se3 has proven to be a topological insulator material that provides a large band gap and a band structure with a single Dirac cone
G. M. Knebl +7 more
core +1 more source
Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
In this study, chloride-based chemical vapor deposition (CVD) of SiC is used either to grow epitaxial layers at high growth rate and to facilitate homopolytypic growth on on-axis substrates or to grow bulk material at temperatures lower than 2000 °C.
Henry, Anne, +11 more
core +1 more source
3D epitaxial growth through holes for the fabrication of thin-film solar cells
S.37-41Some interesting effects of three-dimensional epitaxial growth have been observed and simulated during the development of a silicon deposition process for the fabrication of a new type of solar cell. The Epitaxy Wrap-Through (EpiWT) cell is a rear-
Pocza, D. +3 more
core +1 more source
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge +8 more
wiley +1 more source
(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD
In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed.
Yunlong He +8 more
doaj +1 more source
Epitaxial growth of SiC on complex substrates [PDF]
Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study.
Zhang FF +8 more
core
Experiments and thermophysical simulations were conducted to investigate the electron beam powder bed fusion electron beam (PBF‐EB/M) process for the γ′‐strengthened nickel‐based superalloy Inconel 738LC. The results demonstrate the impact of process‐induced microstructural variations on high‐temperature mechanical behavior, providing a basis for ...
Jan Niklas Petenati +11 more
wiley +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Research on the effect of remelting on the epitaxial growth process of single crystal superalloy
In this paper, the remelting process is applied to Laser Directed Energy Deposition (L-DED) to repair single crystal superalloys. The main formation modes of stray grains in single crystal epitaxial growth were analyzed, and the inhibitory effect of ...
Gengshuo Liu +8 more
doaj +1 more source

