Results 11 to 20 of about 14,202 (264)
Defect free strain relaxation of microcrystals on mesoporous patterned silicon
Nature Communications, 2022 Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect free ...
Alexandre Heintz +9 more
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The epitaxy of 2D materials growth [PDF]
Nature Communications, 2020 Abstract Two dimensional (2D) materials consist of one to a few atomic layers, where the intra-layer atoms are chemically bonded and the atomic layers are weakly bonded. The high bonding anisotropicity in 2D materials make their growth on a substrate substantially different from the conventional thin film growth.
Jichen Dong +3 more
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Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study
Advances in Condensed Matter Physics, 2022 First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface.
J. H. Camacho-García +7 more
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Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates
AIP Advances, 2023 We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films.
Jie Zhang +4 more
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Research on silicon carbide epitaxial equipment technology
机车电传动, 2023 Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal
YUAN Fushun +3 more
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Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)
Materials Research Letters, 2021 Epitaxial Cr2AlC MAX phase thin films were grown on MgO(111) and Al2O3(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr2AlC thin films on MgO (111) reveal phase purity, columnar growth, the epitaxial ...
Marc Stevens +5 more
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Crystals, 2023 Epitaxy is the process of crystallization of monocrystalline layers and nanostructures on a crystalline substrate. It allows for the crystallization of various semiconductor layers on a finite quantity of semiconductor substrates, like GaAs, InP, GaP ...
Ewa Dumiszewska +4 more
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Probing on growth and characterizations of SnFe2O4 epitaxial thin films on MgAl2O4 substrate
Frontiers in Materials, 2014 Epitaxial tin ferrite (SnFe2O4) thin films were grown using KrF excimer (248 nm) pulsed laser deposition technique under different growth conditions. Highly epitaxial thin films were obtained at growth temperature of 650 ˚C.
Ram eGupta +4 more
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Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
Crystals, 2023 In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo +7 more
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Influence of Energy and Temperature in Cluster Coalescence Induced by Deposition
Advances in Condensed Matter Physics, 2012 Coalescence induced by deposition of different Cu clusters on an epitaxial Co cluster supported on a Cu(001) substrate is studied by constant-temperature molecular dynamics simulations.
J. C. Jiménez-Sáez +2 more
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