Defect free strain relaxation of microcrystals on mesoporous patterned silicon
Nature Communications, 2022 Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect free ...
Alexandre Heintz +9 more
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In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C [PDF]
, 1989 We report an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2 which was formed by codeposition of Co and Si near room temperature.
Lin, T. L., Nieh, C. W.
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Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates
AIP Advances, 2023 We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films.
Jie Zhang +4 more
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Epitaxial lift-off of II-VI semiconductors from III-V substrates using a MgS release layer [PDF]
, 2013 Epitaxial lift-off (ELO) is a post-growth process that allows an epitaxial layer to be removed from its original substrate and transferred to a new one.
Davidson, Ian A +3 more
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Low-threshold room-temperature embedded heterostructure lasers [PDF]
, 1976 Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in ...
Gover, A. +3 more
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Research on silicon carbide epitaxial equipment technology
机车电传动, 2023 Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal
YUAN Fushun +3 more
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Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)
Materials Research Letters, 2021 Epitaxial Cr2AlC MAX phase thin films were grown on MgO(111) and Al2O3(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr2AlC thin films on MgO (111) reveal phase purity, columnar growth, the epitaxial ...
Marc Stevens +5 more
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Crystals, 2023 Epitaxy is the process of crystallization of monocrystalline layers and nanostructures on a crystalline substrate. It allows for the crystallization of various semiconductor layers on a finite quantity of semiconductor substrates, like GaAs, InP, GaP ...
Ewa Dumiszewska +4 more
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Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth [PDF]
, 1989 The perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ~600 °C was measured at temperatures from 24 up to 650 °C. At 600 °C, the perpendicular x-ray strain is –0.86%, which is about the x-ray strain that a stress-free ...
Bai, Gang +4 more
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Growth of Epitaxial Oxide Thin Films on Graphene [PDF]
, 2016 The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood.
Alford, N +8 more
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