Results 11 to 20 of about 5,045,647 (235)
Effect of Dopants on Epitaxial Growth of Silicon Nanowires [PDF]
Nanomaterials and Nanotechnology, 2014 We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates.
Sung Hwan Chung +2 more
doaj +2 more sources
Craniofacial growth theory and orthodontic treatment
, 1990 http://babel.hathitrust.org/cgi/pt?id=uc1.l0061452249;view=2up;ui=fullscreen#page/n0/mode ...
Symposium on Craniofacial Growth
core +7 more sources
Growth modification : what works, what doesn't, and why
, 1999 http://babel.hathitrust.org/cgi/pt?id=mdp.39015046466275;view=2up;ui=fullscreen#page/n0/mode ...
Symposium on Craniofacial Growth
core +7 more sources
Modeling and Control of Epitaxial Thin Film Growth [PDF]
, 2003 Thin film deposition is a manufacturing process in which tolerances may approach the size of individual atoms. The final film is highly sensitive to the processing conditions, which can be intentionally manipulated to control film properties. A lattice
Gallivan, Martha Anne
core +1 more source
Molecular beam epitaxial growth of Bi2Se3 nanowires and nanoflakes [PDF]
, 2014 Topological Insulators are in focus of immense research efforts and rapid scientific progress is obtained in that field. Bi2Se3 has proven to be a topological insulator material that provides a large band gap and a band structure with a single Dirac cone
G. M. Knebl +7 more
core +1 more source
Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates
AIP Advances, 2023 We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films.
Jie Zhang +4 more
doaj +1 more source
Research on silicon carbide epitaxial equipment technology
机车电传动, 2023 Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal
YUAN Fushun +3 more
doaj
Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)
Materials Research Letters, 2021 Epitaxial Cr2AlC MAX phase thin films were grown on MgO(111) and Al2O3(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr2AlC thin films on MgO (111) reveal phase purity, columnar growth, the epitaxial ...
Marc Stevens +5 more
doaj +1 more source
Crystals, 2023 Epitaxy is the process of crystallization of monocrystalline layers and nanostructures on a crystalline substrate. It allows for the crystallization of various semiconductor layers on a finite quantity of semiconductor substrates, like GaAs, InP, GaP ...
Ewa Dumiszewska +4 more
doaj +1 more source
Probing on growth and characterizations of SnFe2O4 epitaxial thin films on MgAl2O4 substrate
Frontiers in Materials, 2014 Epitaxial tin ferrite (SnFe2O4) thin films were grown using KrF excimer (248 nm) pulsed laser deposition technique under different growth conditions. Highly epitaxial thin films were obtained at growth temperature of 650 ˚C.
Ram eGupta +4 more
doaj +1 more source