Results 21 to 30 of about 100,599 (299)
Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo +7 more
doaj +1 more source
Probing on growth and characterizations of SnFe2O4 epitaxial thin films on MgAl2O4 substrate
Epitaxial tin ferrite (SnFe2O4) thin films were grown using KrF excimer (248 nm) pulsed laser deposition technique under different growth conditions. Highly epitaxial thin films were obtained at growth temperature of 650 ˚C.
Ram eGupta +4 more
doaj +1 more source
Influence of Energy and Temperature in Cluster Coalescence Induced by Deposition
Coalescence induced by deposition of different Cu clusters on an epitaxial Co cluster supported on a Cu(001) substrate is studied by constant-temperature molecular dynamics simulations.
J. C. Jiménez-Sáez +2 more
doaj +1 more source
High Uniformity 6-Inch InGaP Epitaxial Growth
The growth of 6-inch In0.485Ga0.515P has been examined in this study. The effects of growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate, and crystal quality have been systematically investigated and discussed ...
Shangyu Yang +7 more
doaj +1 more source
Epitaxial growth of (Ba0.7Sr0.3)TiO3 thin films on GdScO3 substrates by magnetron sputtering
Epitaxial growth of Ba0.7Sr0.3TiO3 (BST70) thin films on GdScO3 (GSO) substrates had been realized using the radio frequency magnetron sputtering system with the epitaxial alignment [001]BST70||[110]GSO and [010]BST70||[001]GSO.
Dongjin Ye +3 more
doaj +1 more source
Epitaxial growth of two-dimensional stanene [PDF]
Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2.
Zhu, Fengfeng +8 more
openaire +3 more sources
Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics.
Robynne L. Paldi +10 more
doaj +1 more source
Epitaxial Crystal Growth of Charged Colloids [PDF]
A pattern of repulsive, charged lines is shown to direct three-dimensional (3D) crystallization in a system of long-range repulsive, density-matched colloids. At volume fractions where the bulk phase behavior leads to bcc crystallization, the 1D template was found to induce formation of a metastable fcc crystal. The bcc crystals were oriented with the (
Hoogenboom, J. P. +4 more
openaire +6 more sources
Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates [PDF]
We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition (HWCVD).
Atwater, Harry A. +2 more
core +1 more source
Epitaxial heterostructures, in particular those 2D vertical heterostructures with close face-to-face contact, are appealing candidates for photocatalytic CO2 reduction.
Dongdong Zhang +5 more
doaj +1 more source

