Results 21 to 30 of about 14,202 (264)
High Uniformity 6-Inch InGaP Epitaxial Growth
The growth of 6-inch In0.485Ga0.515P has been examined in this study. The effects of growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate, and crystal quality have been systematically investigated and discussed ...
Shangyu Yang +7 more
doaj +1 more source
A review on advances in epitaxial growth technology of MoS2 2D materials
As a typical two-dimensional transition metal disulfide compound, MoS2 shows great potential for applications in electronic and optoelectronic devices due to its unique electronic, optical and mechanical properties.
Yang Wang +9 more
doaj +1 more source
Epitaxial growth of (Ba0.7Sr0.3)TiO3 thin films on GdScO3 substrates by magnetron sputtering
Epitaxial growth of Ba0.7Sr0.3TiO3 (BST70) thin films on GdScO3 (GSO) substrates had been realized using the radio frequency magnetron sputtering system with the epitaxial alignment [001]BST70||[110]GSO and [010]BST70||[001]GSO.
Dongjin Ye +3 more
doaj +1 more source
Epitaxial heterostructures, in particular those 2D vertical heterostructures with close face-to-face contact, are appealing candidates for photocatalytic CO2 reduction.
Dongdong Zhang +5 more
doaj +1 more source
Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics.
Robynne L. Paldi +10 more
doaj +1 more source
Epitaxial growth of two-dimensional stanene [PDF]
Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2.
Zhu, Fengfeng +8 more
openaire +3 more sources
Summary: Mixed-dimensional heterostructures have drawn significant attention due to their intriguing physical properties and potential applications in electronic and optoelectronic nanodevices. However, limited by the lattice matching, the preparation of
Xiang Chen +9 more
doaj +1 more source
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology ...
Yong Du +8 more
doaj +1 more source
Epitaxial Crystal Growth of Charged Colloids [PDF]
A pattern of repulsive, charged lines is shown to direct three-dimensional (3D) crystallization in a system of long-range repulsive, density-matched colloids. At volume fractions where the bulk phase behavior leads to bcc crystallization, the 1D template was found to induce formation of a metastable fcc crystal. The bcc crystals were oriented with the (
Hoogenboom, J. P. +4 more
openaire +6 more sources
In situ synchrotron high‐energy X‐ray diffraction reveals the real‐time high‐temperature phase evolution of a ternary V‐9Si‐6.5B alloy. The study uncovers a kinetically delayed V5SiB2 → V8SiB4 transformation governed by massive structural and chemical barriers.
Zahra Sabeti +4 more
wiley +1 more source

