Results 51 to 60 of about 5,045,647 (235)

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

, 2010
In this study, chloride-based chemical vapor deposition (CVD) of SiC is used either to grow epitaxial layers at high growth rate and to facilitate homopolytypic growth on on-axis substrates or to grow bulk material at temperatures lower than 2000 °C.
Henry, Anne,, Kordina, Olle,, Leone, Stefano,, Franziska C. Beyer, Olof Kordina, Hemmingsson, Carl,, Stefano Leone, Anne Henry, Erik Janzén, Janzén, Erik,, Beyer, Franziska,, Carl Hemmingsson   +11 more
core   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source

Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Nature Communications, 2019
Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2,
Xiumei Zhang, Haiyan Nan, Shaoqing Xiao, Xi Wan, Xiaofeng Gu, Aijun Du, Zhenhua Ni, Kostya (Ken) Ostrikov   +7 more
doaj   +1 more source

Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructures

Nano-Micro Letters, 2019
Semiconductor nanomaterial-based epitaxial heterostructures with precisely controlled compositions and morphologies are of great importance for various applications in optoelectronics, thermoelectrics, and catalysis. Until now, various kinds of epitaxial
Junze Chen, Qinglang Ma, Xue-Jun Wu, Liuxiao Li, Jiawei Liu, Hua Zhang   +5 more
doaj   +1 more source

Nitride MXenes Beyond Carbides: Bridging the Gap Between Computational Prediction and Experimental Realization

Advanced Functional Materials, EarlyView.
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley   +1 more source

Molecular beam epitaxy of Cd3As2 on a III-V substrate

APL Materials, 2016
Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac
Timo Schumann, Manik Goyal, Honggyu Kim, Susanne Stemmer   +3 more
doaj   +1 more source

Ligand Assisted Epitaxial Growth of CsPbBr3 Microcrystal Resonators With Record ‐Low Lasing Thresholds

Advanced Functional Materials, EarlyView.
Solution‐based ligand‐assisted epitaxial growth (LAEG) yields high‐quality CsPbBr3 microcrystals on different substrates with superior morphology, passivated surfaces, and high photoluminescence quantum yield. These robust micro‐resonators achieve record‐low room‐temperature lasing thresholds of 7.2 kW·cm−2 and maintain operational stability up to 90 ...
Shuyu Zhou, Viktor Rehm, Zijian Peng, Tomáš Hrbek, Anastasia Barabash, Christoph J. Brabec, Berke Özyalin, Yufei Han, Johannes Böhmer, Johannes Will, Erdmann Spiecker, Klaus Götz, Tobias Unruh, Jędrzej Korczak, Tomasz Story, Felix Hilpert, Olaf Brummel, Jörg Libuda, Iva Matolínová, Wolfgang Heiss   +19 more
wiley   +1 more source

Atomic‐Scale Visualization of Topotactic Resistive Switching in Epitaxial La0.5Sr0.5CoOx Neuromorphic Memristors

Advanced Functional Materials, EarlyView.
Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong, Yen‐Jung Chen, Shih‐Chao Chang, Jui‐yuan Chen, Jan‐Chi Yang, Wen‐Wei Wu   +5 more
wiley   +1 more source

Growth of High Quality Epitaxial Rhombohedral Boron Nitride

, 2012
Epitaxial growth of sp(2)-hybridized boron nitride (sp(2) BN) films on sapphire substrates is demonstrated in a hot wall chemical vapor deposition reactor at the temperature of 1500 degrees C, using triethyl boron and ammonia as precursors. The influence
Henry, Anne,, Högberg, Hans,, Jensen, Jens,, Pedersen, Henrik,, Chubarov, Mikhail,   +4 more
core   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source