Results 61 to 70 of about 14,202 (264)

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

Effect of Dopants on Epitaxial Growth of Silicon Nanowires

Nanomaterials and Nanotechnology, 2014
We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates.
Sung Hwan Chung, Sarath Ramadurgam, Chen Yang   +2 more
doaj   +1 more source

Imaging the Thickness‐Dependent Formation of Schottky Barriers in Metal–Semiconductor van der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito, Mariarosa Cavallo, Marco Paye, Clement Gureghian, Albin Colle, Jiho Roh, Dipak Maity, Clemence Villefroy, Erwan Dandeu, Herve Cruguel, Stephane Lorcy, Marie Hervé, James K. Utterback, Pavel Dudin, Johan Biscaras, José Avila, Emmanuel Lhuillier, Debora Pierucci   +17 more
wiley   +1 more source

Spin Dynamics in the van der Waals Ferromagnet CrTe2 Engineered by Niobium Doping

Advanced Functional Materials, EarlyView.
Spin‐dynamic magnetic properties of van der Waals (vdW) ferromagnet 1T‐CrTe2 are tuned via niobium (Nb) as Cr1‐xNbxTe2 (x = 0–0.2). Nb doping enables wide‐band tuning of the resonance frequency from 40 GHz down to the few‐GHz regime, accompanied by a moderate increase in the Gilbert damping from ∼0.066 to ∼0.14.
Dhan Raj Lawati, Prem Bahadur Karki, Jitender Kumar, Karishma Prasad, Mohamed A. Elekhtiar, Kai Huang, Bibek Tiwari, Suvechhya Lamichhane, Rupak Timalsina, Zane Hubble, Ayodimeji E. Aregbesola, John Watt, Sy‐Hwang Liou, Evgeny Y. Tsymbal, Jian Wang, Kapildeb Ambal, Abdelghani Laraoui   +16 more
wiley   +1 more source

Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering

Advanced Functional Materials, EarlyView.
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle, Valerio Piazza, Andrea Filippo, Melanie Micali, Luna Warzawa, Thomas Hagger, Kamil Wodzislawski, Julien Hurni, Valentin Biselli, Ioannis Kalogerakis, Konstantinos Rogdakis, George Viskadouros, Emmanuel Kymakis, Esther Alarcon‐Llado, Anna Fontcuberta i Morral   +14 more
wiley   +1 more source

Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe

Advanced Functional Materials, EarlyView.
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta, Chris Matsumura, Hongbin Yang, Sarah Edwards, Rebeca M. Gurrola, Jiun‐Haw Chu, Hanjong Paik, Yongqiang Wang, David A. Muller, Robert Streubel, Tzu‐Ming Lu, Serena Eley   +11 more
wiley   +1 more source

Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics

APL Materials, 2020
Motivated by the exciting properties of metal halide perovskites in photovoltaic applications, there is an evolving need to further explore the limitations of this class of materials in broader fields and high end optoelectronics, which requires better ...
Lili Wang, Isaac King, Pei Chen, Matthew Bates, Richard R. Lunt   +4 more
doaj   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

High‐Throughput Design of Epitaxial Orientation for Functional Thin Films

Advanced Materials Interfaces
The structure and properties of functional thin films are highly sensitive to their epitaxial orientations. However, the orientation of the thin film is typically constrained by that of the substrate, making it challenging to achieve distinct ...
Liyufen Dai, Mingqiang Cheng, Mingqiang Huang, Xiangli Zhong, Gaokuo Zhong   +4 more
doaj   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source