Results 71 to 80 of about 5,045,647 (235)
Advanced Materials, EarlyView.Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji +15 more
wiley +1 more source
Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics
APL Materials, 2020 Motivated by the exciting properties of metal halide perovskites in photovoltaic applications, there is an evolving need to further explore the limitations of this class of materials in broader fields and high end optoelectronics, which requires better ...
Lili Wang +4 more
doaj +1 more source
Advanced Materials, EarlyView.Template effect and kinetic control enable crystal‐phase engineering of Ru nanocrystals, granting access to either metastable fcc‐Ru or stable hcp‐Ru with distinct surface structures, thermal stabilities, and catalytic behaviors. Moreover, the hcp‐Ru can further serve as an epitaxial template to direct Pd and Rh nanocrystals into the metastable hcp ...
Jianlong He +3 more
wiley +1 more source
Epitaxial growth of ferroelectric oxide filmsl
, 2006 This review paper begins with a brief overview of the most common ferroelectric materials, the perovskites and the Aurivillius families. The epitaxial growth of ferroelectric epitaxial films can be a viable approach to improve the ferroelectric ...
FORNARI, Roberto, J. Schwarzkopf
core +1 more source
High‐Throughput Design of Epitaxial Orientation for Functional Thin Films
Advanced Materials InterfacesThe structure and properties of functional thin films are highly sensitive to their epitaxial orientations. However, the orientation of the thin film is typically constrained by that of the substrate, making it challenging to achieve distinct ...
Liyufen Dai +4 more
doaj +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
Nanoscale Research Letters, 2011 We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching.
Wang Yongjin, Hu Fangren, Hane Kazuhiro
doaj
AIP Advances, 2016 The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh ...
Sangmo Koo +3 more
doaj +1 more source
Defect‐Templated Phase Engineering in Atomically Thin Metals
Advanced Materials, EarlyView.Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain +25 more
wiley +1 more source
, 1976 http://babel.hathitrust.org/cgi/pt?id=mdp.39015006456928;view=2up;ui=fullscreen#page/n0/mode ...
Symposium on Craniofacial Growth
core +3 more sources