Results 71 to 80 of about 39,172 (265)
High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum
, 2023 Epitaxial graphene on SiC is the most promising substrate for the next generation 2D electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the door to the use of all technological processes developed for silicon ...
Bradford, J +13 more
core +1 more source
Advanced Materials, EarlyView.The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli +12 more
wiley +1 more source
Growth and Characterisation of GaAsBi [PDF]
, 2013 This thesis reports the optical and structural properties of GaAs(1-x)Bi(x) alloys grown on GaAs by Molecular Beam Epitaxy (MBE). The photoluminescence (PL) of a GaAs(0.97)Bi(0.03) alloy was measured over a wide range of temperatures and excitation ...
Mohmad, Abdul Rahman Bin
core
Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet
Advanced Materials, EarlyView.Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens +8 more
wiley +1 more source
Epitaxial Growth on Simox Wafers
, 1985 The top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,
Hon Wai Lam
core +1 more source
Resolving the Structural Duality of Graphene Grain Boundaries
Advanced Materials, EarlyView.Cantilever ncAFM resolves the atomic structure of grain boundaries in graphene, revealing coexisting stable and metastable types. Both contain pentagon/heptagon defects, but metastable GBs show irregular geometries. Modeling shows metastable GBs form under compression, exhibiting vertical corrugation, while stable GBs are flat.
Haojie Guo +11 more
wiley +1 more source
JPhys MaterialsThis study explores the influence of different hydrocarbons, methane and propane, on the properties of 4H-SiC epitaxial layers grown by chloride-based chemical vapor deposition.
Misagh Ghezellou +4 more
doaj +1 more source
Crystal Growth Engineering for Dendrite‐Free Zinc Metal Plating
Advanced Materials, EarlyView.This research employed the rare‐earth ion dysprosium (Dy) to modulate aqueous zinc (Zn) metal plating. Integrated multiscale experiments and computational modeling unveiled the preferential adsorption of Dy on specific crystal facets, which activated screw dislocation‐driven Zn growth.
Guifang Zeng +10 more
wiley +1 more source
Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics
APL Materials, 2020 Motivated by the exciting properties of metal halide perovskites in photovoltaic applications, there is an evolving need to further explore the limitations of this class of materials in broader fields and high end optoelectronics, which requires better ...
Lili Wang +4 more
doaj +1 more source
Cross-sectional cleavages of SiC for evaluation of epitaxial layers
, 2000 The application of cleavages on SiC epitaxial layers are presented as a feedback for an evaluation of the growth. The preferred cleavage planes are described and discussed in relation to the atomic configuration of the SiC lattice.
M Syväjärvi +5 more
core +1 more source