Results 81 to 90 of about 5,045,647 (235)
Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates [PDF]
APL MaterialsIn recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties.
Jagannath Jena +14 more
doaj +1 more source
Advanced Materials, EarlyView.Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho +6 more
wiley +1 more source
Epitaxial growth of cesium potassium antimonide photocathode [PDF]
APL MaterialsThe performance of electron accelerators and photon detectors heavily depends on the efficiency and stability of the photocathode. The emitted beam current and brightness can be limited by surface and bulk disorder in polycrystalline photocathode ...
Kali Prasanna Mondal +7 more
doaj +1 more source
Advanced Materials, EarlyView.Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur +10 more
wiley +1 more source
Epitaxial graphene growth on 3C SiC by Si sublimation in UHV [PDF]
, 2015 This thesis is a step forward in understanding the growth of graphene, a single layer of carbon atoms, by annealing Silicon Carbide (SiC) thin films in Ultra High Vacuum.
Gupta, Bharati
core
Moiré‐Induced Symmetry Breaking of Charge Order in van der Waals Heterostructures
Advanced Materials, EarlyView.A uniaxial moiré potential in misfit (MS)1+δTaS2 heterostructures selectively reshape charge order: the embedded 1H‐TaS2 layer hosts an incommensurate charge‐density wave, fragmented into nanometer domains and stripped of threefold symmetry. Superconductivity, however, remains uniform and fully gapped, revealing heterosymmetry stacking as a selective ...
Sandra Sajan +12 more
wiley +1 more source
Crystal orientation of epitaxial film deposited on silicon surface
Scientific ReportsDirect growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials.
Satoru Kaneko +13 more
doaj +1 more source
Strain-relief by single dislocation loops in calcite crystals grown on self-assembled monolayers
Nature Communications, 2016 Epitaxial crystal growth attracts significant interest. Here, the authors use Bragg Coherent Diffraction Imaging to demonstrate calcite crystal precipitation on self-assembled monolayers exhibiting single dislocation loops with different geometries to ...
Johannes Ihli +11 more
doaj +1 more source
Advanced Materials, EarlyView.A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi +12 more
wiley +1 more source
Advanced Materials, EarlyView.A hierarchical flexible ceramic nanofiber membrane integrates a La‐stabilized ZrO2 scaffold with superhydrophobic UiO‐66‐NH2/CdS heterojunctions. The gas–liquid–solid interfacial architecture sustains vapor‐selective desalination, visible‐light charge separation, and rapid H2 extraction, enabling simultaneous freshwater production and photocatalytic ...
Pengfei Lin +9 more
wiley +1 more source