Results 101 to 110 of about 5,045,647 (235)

Synthesis of Bulk Superconducting LiNbO2 Crystals Through CaH2 Reduction

Advanced Materials, EarlyView.
CaH2 reduction reconstructively transforms insulating LiNbO3 single crystals into superconducting bulk LiNbO2 with a critical temperature of Tc = 14.4 K. Scanning electron microscopy reveals large‐volume, high‐yield phase conversion. Magnetization measurements demonstrate a robust ∼ 77% Meissner shielding fraction, establishing bulk superconductivity ...
Ryan Paxson, Stephanie J. Hong, Bicky S. Moirangthem, Parham Kabirifar, Saya Takeuchi, Tianyu Li, Chih‐Yu Lee, Haotong Liang, Keenan Avers, Kamal R. Joshi, Amlan Datta, Makariy A. Tanatar, Shanta Saha, Joseph A. Dura, Peter Zavalij, Johnpierre Paglione, Ruslan Prozorov, Alexander J. Grutter, Efrain E. Rodriguez, Ichiro Takeuchi   +19 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

Advanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu, Yiran Li, Tsung‐Han Tsai, Sudip Acharya, Yi Lu, Jie Zhou, Samuel A. Haessly, Shui‐Qing Yu, Nanditha M. Dissanayake, Edward K. Huang, Jiarui Gong, Zhenqiang Ma   +11 more
wiley   +1 more source

2D Hierarchical Black Phosphorus‐Mn2O3 Heterostructured Composites for High‐Performance Flexible Supercapacitors

Advanced Materials Interfaces, EarlyView.
A sonochemical strategy constructs an ex situ 2D hierarchical black phosphorus–Mn2O3 heterostructure, enabling intimate interfacial coupling, enhanced charge transport, and improved electrochemical stability. The optimized BPM‐37.5% electrode delivers 466 F g−1 with 84% retention after 8000 cycles, while the flexible device exhibits high areal energy ...
Sowmiya Selvaraj, Anand Sreekantan Thampy   +1 more
wiley   +1 more source

Enhanced Magnetism in Cation‐Modulated Manganite Heterostructures

Advanced Materials Interfaces, EarlyView.
Magnetic contrast is introduced within a single manganite system via a small modulation of the cation ratio. Enhanced magnetization occurs in superlattices with small stoichiometric differences. The combined SQUID, polarized neutron reflectometry, and x‐ray absorption spectroscopy results are consistent with the interfacial electronic reconstruction ...
Sangkyun Ryu, R. F. Need, Brian Kirby, Tae‐Yeol Jeon, Younghak Kim, Jin H. Cho, Sungkyun Park, Hyoungjeen Jeen   +7 more
wiley   +1 more source

Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid‐Phase Epitaxy

Advanced Materials Interfaces, EarlyView.
Thin SiGe buffer layers are grown by oxidative solid‐phase epitaxy, resulting in a nanopatterning of varying Ge concentration across the surface of the sample. The nanopatterning is caused by a hexagonal network of dislocations on the SiGe/Si(111) interface, and is visible by scanning electron microscopy, providing a non‐destructive method for ...
Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi, Sunzhuoran Wang, Chengqian Liao, Vatsalkumar Patel, Andrew P. Knights, Ryan B. Lewis   +7 more
wiley   +1 more source

Vapor phase epitaxy of cesium tin chloride perovskite films and quantum wells

Communications Materials
Epitaxy has advanced the thin-film electronics field by enhancing many key features of semiconductors. While halide perovskites are performing well in photovoltaics, their potential for high-end electronics applications remains underexplored, and ...
Aungkan Sen, Kai Sun, Richard R. Lunt
doaj   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

Advanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto, Yannik Junk, Marvin Frauenrath, Florian Bärwolf, Jean‐Michel Hartmann, Andreas Mai, Detlev Grützmacher, Joachim Knoch, Dan Buca, Qing‐Tai Zhao   +9 more
wiley   +1 more source

Structure Defects in CVD-Grown Silicon Carbide Epitaxial Wafers: From Fundamental Principles to Advanced Reduction Strategies

Micromachines
The chemical vapor deposition (CVD) method is a key technology for producing silicon carbide (SiC) epitaxial wafers used in high-performance power devices.
Guoliang Zhang, Tiantian Li, Yingbin Liu, Jinfeng Sun, Shaofei Zhang   +4 more
doaj   +1 more source