Results 111 to 120 of about 39,172 (265)

Programmable Stepwise Heteroepitaxial Growth of Colloidal Crystals With Different Phases

Advanced Materials, EarlyView.
Stepwise heteroepitaxial growth is adapted to colloidal crystal engineering with DNA, enabling face‐centered cubic (fcc) facets to grow on body‐centered cubic (bcc) crystals with 110 facets. This approach tolerates large lattice mismatches, extending heteroepitaxy beyond the limits of conventional atomic systems.
Xiaowei Liu, Yuanwei Li, Ramin Yazdaanpanah, Ye Zhang, Rachel R. Chan, Xiaobing Hu, Yiming Yang, Vinayak P. Dravid, Koray Aydin, Chad A. Mirkin   +9 more
wiley   +1 more source

Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD

, 2013
The development of a chemical vapor deposition (CVD) process for very thick silicon carbide (SiC) epitaxial layers suitable for high power devices is demonstrated by epitaxial growth of 200 nm thick, low doped 4H-SiC layers with excellent morphology at ...
Kordina, Olle,, Don Booker, Ian,, Yazdanfar, Milan,, Stenberg, Pontus,, Pedersen, Henrik,, Gueorguiev Ivanov, Ivan,, Janzén, Erik,   +6 more
core   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Formation of V-grooves in SrRuO3 epitaxial film

, 2016
SrRuO3 thin films were epitaxially grown on a (001) SrTiO3 substrate using pulsed laser deposition technique. Various defects such as V-grooves, threading dislocations and dislocation dipoles are observed in the SrRuO3 epitaxial film.
Wang, Y, Liu, G, Liu, W, Petrov, PK, Feng, H, Alford, NM, Zou, B, Liu, B   +7 more
core   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source

Interface‐Engineered Binary Framework Composites: Advancing Porous Materials for Precision Medicine

Advanced Materials Interfaces, EarlyView.
Binary framework composites integrate two complementary porous architectures into a unified platform, enabling multifunctional design, enhanced structural tunability, and improved physicochemical performance. By combining high surface area, ordered porosity, interfacial synergy, and versatile functionalization, these hybrid materials offer new ...
Navid Rabiee, Mohammad Rabiee, Mohammad Akrami‐Hasan‐Kohal, Sidi A. Bencherif   +3 more
wiley   +1 more source

Epitaxial Growth of Diamond and Diamond Devices

, 1989
For the practical application of diamond semiconductor devices, the manufacture of planar-type devices is important. Homoepitaxial growth of diamonds would be a useful technique for making semiconducting diamond films.
Hideaki Nakahata, Hiromu Shiomi, Naoji Fujimori, Yoshiki Nishibayashi, Takahiro Imai   +4 more
core   +1 more source

Van der Waals Chromium Telluride Thin Films Prepared by Hybrid Pulsed Laser Deposition With Tunable Magnetism

Advanced Materials Interfaces, EarlyView.
Epitaxial Cr(1+δ)Te2 thin films were synthesized via hybrid Pulsed Laser Deposition (PLD) that combined Molecular Beam Epitaxy (MBE) techniques with PLD. Control of the Cr intercalation, δ, enabled modulation of magnetic anisotropy, Curie temperature, and transport properties.
Pia Henning, Anna Tschesche, Tobias Meyer, Jasnamol Palakkal   +3 more
wiley   +1 more source

Epitaxial Growth of Refractory Silicides on Silicon

, 1984
Epitaxial refractory silicides were grown on silicon by solid phase epitaxy method. Transmission electron microscopy has been performed to study the microstructures of epitaxial layers and their orientation relationships with respect to substrate Si ...
L. J. Chen, H. C. Cheng, L. J. Chou, W. T. Lin, M. S. Fung   +4 more
core   +1 more source