Results 121 to 130 of about 39,172 (265)
Facet‐Specific PbS Quantum Dot Passivation Using Halide Perovskites for SWIR Photodetectors
Advanced Materials Interfaces, EarlyView.PbS quantum dots (QDs) are emerging as powerful short‐wave infrared photodetectors, yet the passivation mechanism of large QDs by perovskites ‐ critical for their stability ‐ remains unexplained. Here, we unveil the ligand structure of CH3NH3PbI3 (MAPI)‐passivated 4‐nm PbS QDs using FTIR, XPS, SEM, NMR, and DFT.
L. Paillardet +13 more
wiley +1 more source
METASTABLE ORDERED COMPOUNDS FORMED DURING EPITAXIAL GROWTH
, 1988 New ordered compounds have recently been observed to form pseudomorphically during epitaxial growth. These phases do not appear on the equilibrium bulk phase diagram. The paper first reviews the current knowledge of epitaxial strain layers.
C.P. FLYNN
core +1 more source
Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment
Advanced Materials Interfaces, EarlyView.Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley +1 more source
Epitaxial Growth of Transition Metal Silicides on Silicon
, 1985 Recent progresses in the epitaxial growth of refractory metal suicides, FeSi2 and manganese suicides on silicon are reviewed.The formation and structures of epitaxial suicides are described. Factors affecting the suicide epitaxy are examined. The lattice
L. J. Chen, H. C. Cheng, W. T. Lin
core +1 more source
Reconnaissance Peptide Labeling Grain Boundary of Chemically Grown MoS2 Polycrystalline Monolayer
Advanced Materials Technologies, EarlyView.Self‐assembled peptides on substrates, through adsorption and aggregation, offer an alternative way to label grain boundaries in chemically grown single‐layer polycrystalline MoS2. During an early nucleation step, peptides preferentially bind to grain boundaries.
Linhao Sun, Jinhua Hu
wiley +1 more source
MicromachinesThe chemical vapor deposition (CVD) method is a key technology for producing silicon carbide (SiC) epitaxial wafers used in high-performance power devices.
Guoliang Zhang +4 more
doaj +1 more source
Advanced Materials Technologies, EarlyView.An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
Vapor phase epitaxy of cesium tin chloride perovskite films and quantum wells
Communications MaterialsEpitaxy has advanced the thin-film electronics field by enhancing many key features of semiconductors. While halide perovskites are performing well in photovoltaics, their potential for high-end electronics applications remains underexplored, and ...
Aungkan Sen, Kai Sun, Richard R. Lunt
doaj +1 more source
Advanced Materials Technologies, EarlyView.Flexible silicon carbide (SiC) microelectrode arrays enable high‐fidelity, multichannel cell extracellular recording and precise localized ablation. SiC has been extensively evaluated to persist long‐term in chronic physiological conditions while remaining robust, with excellent electrical and electrochemical stability.
Minh Anh Huynh +4 more
wiley +1 more source
INPLANE X-RAY-SCATTERING OF EPITAXIAL STRUCTURES
, 1995 A new approach for in-plane X-ray scattering from the cleavages of epitaxial films or superlattices, where the scattering vectors are parallel to the interfaces, is proposed.
ZHUANG Y +5 more
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