Results 141 to 150 of about 100,599 (299)

Passivated SiC Surfaces for Photonic and Quantum Applications: Balancing Chemical Stability and Surface Luminescence

open access: yesAdvanced Materials Interfaces, EarlyView.
Low‐temperature passivation of SiC reveals that optical surface quality and chemical stability are not directly correlated. Ar plasma‐treated and SiNx‐passivated surfaces yield the lowest photoluminescence background, whereas CF4 plasma and ALD‐grown dielectrics introduce higher emission.
Marina Scharin‐Mehlmann   +4 more
wiley   +1 more source

Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers

open access: yesAdvanced Materials Technologies, EarlyView.
We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng   +8 more
wiley   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

open access: yesAdvanced Materials Technologies, EarlyView.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li   +4 more
wiley   +1 more source

Lattice modulation strategies for 2D material assisted epitaxial growth. [PDF]

open access: yesNano Converg, 2023
Chen Q   +7 more
europepmc   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

open access: yesAdvanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi   +7 more
wiley   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

open access: yesAdvanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou   +22 more
wiley   +1 more source

Epitaxial Growth of (-201) β-Ga2O3 on (001) Diamond Substrates. [PDF]

open access: yesCryst Growth Des, 2023
Nandi A, Cherns D, Sanyal I, Kuball M.
europepmc   +1 more source

Direct Photocurrent Detection of Optical Vortex Based on the Orbital Photo Galvanic Effect: Progress, Challenge, and Perspective

open access: yesAdvanced Science, EarlyView.
Direct orbital angular momentum (OAM) detection through the orbital photogalvanic effect offers a scalable route for integrated optoelectronics. This perspective evaluates symmetry‐driven material selection and demonstrates how electrode matrices enable the resolution of complex, mixed OAM modes.
Jinluo Cheng   +5 more
wiley   +1 more source

Discovering Structure-Adaptive Oxides for Embedded Epitaxial Growth of Perovskite Nanocrystals. [PDF]

open access: yesJ Am Chem Soc
Cao Y   +10 more
europepmc   +1 more source

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