Results 141 to 150 of about 100,599 (299)
Low‐temperature passivation of SiC reveals that optical surface quality and chemical stability are not directly correlated. Ar plasma‐treated and SiNx‐passivated surfaces yield the lowest photoluminescence background, whereas CF4 plasma and ALD‐grown dielectrics introduce higher emission.
Marina Scharin‐Mehlmann +4 more
wiley +1 more source
Introduction to Epitaxial growth of nanostructures and their properties. [PDF]
Zou J.
europepmc +1 more source
Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers
We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng +8 more
wiley +1 more source
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li +4 more
wiley +1 more source
Lattice modulation strategies for 2D material assisted epitaxial growth. [PDF]
Chen Q +7 more
europepmc +1 more source
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou +22 more
wiley +1 more source
Epitaxial Growth of (-201) β-Ga2O3 on (001) Diamond Substrates. [PDF]
Nandi A, Cherns D, Sanyal I, Kuball M.
europepmc +1 more source
Direct orbital angular momentum (OAM) detection through the orbital photogalvanic effect offers a scalable route for integrated optoelectronics. This perspective evaluates symmetry‐driven material selection and demonstrates how electrode matrices enable the resolution of complex, mixed OAM modes.
Jinluo Cheng +5 more
wiley +1 more source
Discovering Structure-Adaptive Oxides for Embedded Epitaxial Growth of Perovskite Nanocrystals. [PDF]
Cao Y +10 more
europepmc +1 more source

