Results 131 to 140 of about 39,172 (265)
On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC
Rhombohedral boron carbide, often referred to as r-B4C, is a potential material for applications in optoelectronic and thermoelectric devices. From fundamental thin film growth and characterization, we investigate the film-substrate interface between the
Sachin, Sharma +7 more
core +1 more source
Turning Water Into a Tool: From Degradation Pathways to Functional Engineering in Halide Perovskites
Advanced Materials Technologies, EarlyView.Water exhibits a threshold‐dependent dual role in lead halide perovskites, acting either as a degradation trigger or as a powerful tool for defect passivation, recrystallization, and structural engineering. This review discusses how controlled water‐mediated interactions govern stability, dimensionality, and optoelectronic performance, providing ...
Raphaella T. S. Gonçalves +4 more
wiley +1 more source
Strain-relaxed, high Ge content, SiGe layers grown on Si (100) substrate by reduced pressure - chemical vapour deposition (RP-CVD) [PDF]
A different approach was taken to relieve strain from a high Germanium (Ge) content, Silicon-Germanium (SiGe) layers on a Silicon (Si) (100) substrate by growing a thin Ge under-layer between substrate and layer.
Alabdulali, Haitham
core
Epitaxial growth of celestite on barite (001) face at a molecular scale
, 2005 In situ AFM experiments have been conducted in order to obtain information about kinetics of celestite epitaxial growth on barite. Growth has been promoted by passing aqueous solutions supersaturated with respect to celestite over freshly cleaved barite (
Sánchez Pastor, Nuria +4 more
core +1 more source
Advanced Optical Materials, EarlyView.A 2×2 multiplexed GaAsSb nanowire photodetector array integrated with L‐shaped metasurfaces is developed for miniaturized infrared polarimetry. Leveraging non‐radiating anapole states that facilitate near‐field enhancement, the device demonstrates strong polarization selectivity at 835 nm.
Longsibo Huang +14 more
wiley +1 more source
Multi-scale modelling of III-nitrides: from dislocations to the electronic structure
, 2009 Gallium nitride and its alloys are direct band gap semiconductors with a wide variety of applications. Of particular importance are light emitting diodes and laser diodes. Due to the lack of suitable lattice-matched substrates, epitaxial layers contain a
core +1 more source
Advanced Optical Materials, EarlyView.A sidewall‐integrated oxide–metal–oxide architecture is demonstrated to overcome efficiency degradation in ultra‐small InGaN/GaN micro‐LEDs. Conformal Al2O3 passivation combined with plasmonic Ag nanoparticles enables localized surface plasmon–exciton coupling, converting surface‐related nonradiative losses into radiative emission.
Pil‐Kyu Jang +17 more
wiley +1 more source
Single Crystal Seed Induced Epitaxial Growth Stabilizes α-FAPbI3 in Perovskite Solar Cells
FAPbI3 stands out as an ideal candidate for the photoabsorbing layer of perovskite solar cells (PSCs), showcasing outstanding photovoltaic properties. Nonetheless, stabilizing photoactive α-FAPbI3 remains a challenge due to the lower formation energy of ...
You, S +10 more
core +1 more source
Self‐Powered Visible‐Blind Graphene/NiO/ZnO UV‐C Photodiodes
Advanced Optical Materials, EarlyView.“A scalable architecture for self‐powered UV‐C photodiodes integrates defect‐engineered p‐NiO/n‐ZnO heterojunctions with highly UV‐C transparent graphene anodes. The type‐II band alignment combined with the built‐in electrical field enables robust zero‐bias charge separation.
Umut Kaya +5 more
wiley +1 more source
Diffusion and kinetics in epitaxial graphene growth on SiC
, 2017 One of the problems that graphene is facing in electronic applications is its quality, which is still far from the level required to obtain an industrial scale production of reliable nanoscale devices, and it is ultimately related to the growth method ...
Tomellini, Massimo +3 more
core