Results 131 to 140 of about 5,045,647 (235)

Lattice modulation strategies for 2D material assisted epitaxial growth. [PDF]

Nano Converg, 2023
Chen Q, Yang K, Liang M, Kang J, Yi X, Wang J, Li J, Liu Z.   +7 more
europepmc   +1 more source

Scalable MoS2/Si Photodiode Arrays From Roll‐to‐Roll Mechanical Exfoliation

Advanced Science, EarlyView.
A dry roll‐to‐roll route transforms mechanically exfoliated MoS2 flake networks into silicon‐integrated photodiode arrays. The MoS2/Si junctions generate photovoltaic output without applied bias, allowing illuminated pixels to locate light spots and reconstruct simple images.
Yigit Sozen, Thomas Pucher, Andres Castellanos‐Gomez   +2 more
wiley   +1 more source

Mechano-Bactericidal Surfaces Achieved by Epitaxial Growth of Metal-Organic Frameworks. [PDF]

Adv Sci (Weinh)
Cao Z, Pandit S, Noa FMA, Zhang J, Gao W, Rahimi S, Öhrström L, Mijakovic I.   +7 more
europepmc   +1 more source

Epitaxial Growth of (-201) β-Ga₂O₃ on (001) Diamond Substrates. [PDF]

Cryst Growth Des, 2023
Nandi A, Cherns D, Sanyal I, Kuball M.
europepmc   +1 more source

Partial Phase‐Separation in the Initial Growth Stage of Exsolution‐Active SrTi0.95‐xNi0.05NbxO3‐δ Thin Films

Advanced Science, EarlyView.
Phase separation emerges during the initial growth of heavily Ni‐ and Ni,Nb‐co‐doped STO thin films, leading to preferential accumulation of Ni and embedded NiOx nanoinclusions in thicker films. Nb co‐doping partially suppresses the ordering of these embedded structures, comprising about 20% of all Ni ions.
Yen‐Po Liu, Moritz L. Weber, Dylan Jennings, Leonid L. Rusevich, Eugene Kotomin, Rainer Timm, Felix Gunkel, Regina Dittmann   +7 more
wiley   +1 more source

High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation. [PDF]

Materials (Basel)
Mancuso AS, De Luca S, Sangregorio E, Muoio A, Gallo E, Vanellone S, Quadrivi E, Trotta A, Calcagno L, Tudisco S, La Via F.   +10 more
europepmc   +1 more source

Flat Bands Induced by Non‐Collinear Antiferromagnetism in CoBi2Te4

Advanced Science, EarlyView.
Flat bands emerge at the edges of intrinsically non‐collinear antiferromagnetic CoBi2Te4 two‐septuple layers through the interplay of spin–orbit coupling–driven band inversion and non‐collinear antiferromagnetism, uncovering a previously unexplored mechanism for flat‐band formation and opening new opportunities for strongly correlated quantum states ...
Ziyuan Zhao, Yuefeng Yin, Jinxing Gu, Mark T. Edmonds, Nikhil V. Medhekar   +4 more
wiley   +1 more source

Epitaxial growth of wafer-scale 2D superconductor single crystals by metal-organic chemical vapor deposition. [PDF]

Nat Commun
Wang Z, Luo T, Shi L, Chen X, Zhang J, Yao Z, Lu J, Huang Y, Zhu Z, Zheng L, Li M, Kis A, Zhang L, Zhang J.   +13 more
europepmc   +1 more source

Flexoelectric Suppression of Interfacial Carrier Loss in BaTiO3 Thin‐Film Bulk Photovoltaic Systems

Advanced Science, EarlyView.
In single‐crystalline BaTiO3 thin films, flexoelectric strain gradients strongly enhance photocurrent by suppressing interfacial carrier loss. Loading experiments reveal a ∼35‐fold photocurrent increase with applied force. Self‐consistent electrostatic modeling shows that strain gradients reshape the interfacial potential landscape, strengthen local ...
Minwoo Jang, Hyunkyu Lim, Sanghoon Yeom, Jaewhan Oh, Yongsoo Yang, Hyungwoo Lee   +5 more
wiley   +1 more source

Heterogeneous Local-Epitaxial Growth Behavior of Ultrathin HfO₂/Al-Doped TiO₂ Bilayer Dielectrics for Dynamic Random-Access Memory Capacitor Applications. [PDF]

ACS Appl Mater Interfaces
Kwon DS, Ye KH, Lee IS, Shin J, Lim J, Kim TK, Seo H, Paik H, Song H, Choi S, Choi JH, Hwang CS.   +11 more
europepmc   +1 more source