Results 131 to 140 of about 100,599 (299)

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Chemical–Mechanical Super-Polishing of Al₂O₃ (0001) Wafer for Epitaxial Purposes

Crystals
A super-polishing procedure was performed on the Al2O3 (0001) surface for epitaxial purposes. The roughness of the final polished surface was measured to be 0.16 nm using atomic force microscopy and X-ray reflectivity techniques.
Chih-Hao Lee, Chih-Hong Lee
doaj   +1 more source

Recent Progress in the Phase‐Controlled Synthesis of Ruthenium Nanocrystals for Catalytic Applications

Advanced Materials, EarlyView.
Template effect and kinetic control enable crystal‐phase engineering of Ru nanocrystals, granting access to either metastable fcc‐Ru or stable hcp‐Ru with distinct surface structures, thermal stabilities, and catalytic behaviors. Moreover, the hcp‐Ru can further serve as an epitaxial template to direct Pd and Rh nanocrystals into the metastable hcp ...
Jianlong He, Zhiqi Wang, Jiaqi Guan, Younan Xia   +3 more
wiley   +1 more source

Spin‐Orbit Torque Induced by Switchable Crystal Inversion Symmetry Breaking

Advanced Materials, EarlyView.
An exotic crystal inversion symmetry breaking in SrRuO3/BiFeO3 heterostructure is revealed, and it can be reversibly manipulated by the ferroelectric polarization of BiFeO3. This crystal inversion symmetry breaking can dramatically enhance the spin‐orbit torque efficiency in the SrRuO3 layer by more than 60%, providing an alternative to design an ...
Zhenyi Zheng, Shu Shi, Zhongran Liu, Qihan Zhang, Naafis Ahnaf Shahed, Himanshu Mavani, Guowei Zhou, Qian Chen, Cheng Zhang, Zhanqi Zhou, Tieyang Zhao, Rui Xiao, Lanxin Jia, Liang Liu, Evgeny Y. Tsymbal, Xiaohong Xu, He Tian, Jingsheng Chen   +17 more
wiley   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry

Advanced Materials Interfaces, EarlyView.
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen, Gustavo A. Alvarez, Jeffrey Z. Kaaret, Patrick Soucy, Amir F. Amhaz, Jeffrey Moses, Kenneth R. Beyerlein, Nicole A. Benedek, Zhiting Tian, Ankit S. Disa   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source