Results 91 to 100 of about 39,172 (265)

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

AIP Advances, 2016
The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh ...
Sangmo Koo, Hyunchul Jang, Sun-Wook Kim, Dae-Hong Ko   +3 more
doaj   +1 more source

Epitaxial graphene growth on 3C SiC by Si sublimation in UHV

, 2015
This thesis is a step forward in understanding the growth of graphene, a single layer of carbon atoms, by annealing Silicon Carbide (SiC) thin films in Ultra High Vacuum.
Gupta, Bharati
core  

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Strain-relief by single dislocation loops in calcite crystals grown on self-assembled monolayers

Nature Communications, 2016
Epitaxial crystal growth attracts significant interest. Here, the authors use Bragg Coherent Diffraction Imaging to demonstrate calcite crystal precipitation on self-assembled monolayers exhibiting single dislocation loops with different geometries to ...
Johannes Ihli, Jesse N. Clark, Alexander S. Côté, Yi-Yeoun Kim, Anna S. Schenk, Alexander N. Kulak, Timothy P. Comyn, Oliver Chammas, Ross J. Harder, Dorothy M. Duffy, Ian K. Robinson, Fiona C. Meldrum   +11 more
doaj   +1 more source

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): Reducing milling damage

, 2017
Epitaxial growth of graphene on SiC is a scalable procedure which does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication.
Josh Lipton-Duffin, Jennifer MacLeod, Mojtaba Amjadipour, Amjadipour, Mojtaba, Francesca Iacopi, Macleod, J, Lipton-Duffin, J, Iacopi, Francesca, Motta, Nunzio, Motta, N, Nunzio Motta, Iacopi, F, Amjadipour, M, Lipton-Duffin, Josh, MacLeod, Jennifer   +14 more
core   +1 more source

Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure [PDF]

, 2005
The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained.
Chen NF, Yu YD, Yin ZG, Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China., Peng, CT, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ctpeng@red.semi.ac.cn, Peng CT, Wu JL, 陈诺夫, Yu Y   +8 more
core   +1 more source

Unveiling Exsolution‐Induced Giant Electronic and Magnetic Property Changes in Non‐Stoichiometric Titanate Perovskite Thin Films

Advanced Materials, EarlyView.
A giant insulator to metal transition and emergent superparamagnetism are revealed by nanoparticle exsolution in non‐stoichiometric titanate perovskite thin films. By combining transport, synchrotron spectroscopy, and first‐principles calculations, this work reveals how defect reconfiguration and lattice reconstruction fundamentally reshape electronic ...
Sungil Kim, June Ho Lee, Yaolong Xing, Dongchang Kim, Haeseong Jeong, Mongjun Jeong, Manuel Valvidares, Stuart S. P. Parkin, Sang Ho Oh, Donghwa Lee, Hyojin Yoon, Hyeon Han   +11 more
wiley   +1 more source

Crystal orientation of epitaxial film deposited on silicon surface

Scientific Reports
Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials.
Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Daishi Shiojiri, Shigeo Yasuhara, Sumanta Kumar Sahoo, Musa Mutlu Can, Ruei Sung Yu, Kripasindhu Sardar, Masahiro Yoshimura, Masaki Azuma, Akifumi Matsuda, Mamoru Yoshimoto   +13 more
doaj   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers [Elektronisk resurs]

The development of ultra-high power electronic devices based on 4H-SiC relies on the growth of high-quality thick epitaxial layers. Chloride-based chemical vapor deposition is preferred for this purpose, and in this study we show that optimizing the ...
Ul-Hassan, Jawad,, Ghezellou, Misagh,, Ghezellou, Misagh, Ul-Hassan, Jawad   +3 more
core   +1 more source