Results 61 to 70 of about 98,806 (261)
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li +11 more
wiley +1 more source
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
The Integrated software and informational system “KROS”
The article describes functions of the information system “KROS”, which consists 2 subsystems “BOS” (block of dispatcher’s schemes) and “BARS”. Complex “BARS” works for organizing a base of calculation circuits of power pools and regions, which have ...
Gonchariuk, N.V. +2 more
doaj
Accurate calculation of equivalent circuit parameters is a prerequisite for accurately calculating the large‐capacity synchronous condenser parameter model.
Xiao Han +3 more
doaj +1 more source
A practical piezoelectric vibration energy harvesting (PVEH) system is usually composed of two coupled parts: a harvesting structure and an interface circuit.
Congcong Cheng +4 more
doaj +1 more source
Here, we provide the reader with the current state of the art in the fabrication of high‐T2‐coherence diamond, optimized through the use of double electron–electron resonance (DEER) spectroscopy. We reveal the main as well as yet unidentified spin defects, the reduction of which is essential for reducing the spin bath and fabricating materials for ...
Olga Rubinas +6 more
wiley +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
Equivalent Circuit Modeling for a Valveless Piezoelectric Pump
Various kinds of the models had been proposed to explain the relationship between the performance and the structural parameters of valveless piezoelectric pumps, so as to evaluate the functional performance such devices.
Jianhui Zhang, Yuan Wang, Jun Huang
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A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan +16 more
wiley +1 more source

