Results 171 to 180 of about 2,049,776 (246)
Some of the next articles are maybe not open access.
2019 41st Annual EOS/ESD Symposium (EOS/ESD), 2019
Electrostatic Discharge (ESD) can falsely program or erase the poly fuse cell even with a standard ESD protection device in parallel. In this study, special ESD protection circuits including phase change disabling circuits are successfully introduced. It is demonstrated that those can prevent the poly fuse from ESD damage by blocking ESD currents from ...
Shao-Chang Huang +9 more
openaire +2 more sources
Electrostatic Discharge (ESD) can falsely program or erase the poly fuse cell even with a standard ESD protection device in parallel. In this study, special ESD protection circuits including phase change disabling circuits are successfully introduced. It is demonstrated that those can prevent the poly fuse from ESD damage by blocking ESD currents from ...
Shao-Chang Huang +9 more
openaire +2 more sources
IEEE Transactions on Electron Devices, 2023
A novel dual-direction silicon-controlled rectifier (DDSCR) embedded with segmental and cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for electrostatic discharge (ESD) protection.
Hailian Liang +7 more
semanticscholar +1 more source
A novel dual-direction silicon-controlled rectifier (DDSCR) embedded with segmental and cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for electrostatic discharge (ESD) protection.
Hailian Liang +7 more
semanticscholar +1 more source
Design of Bi-Directional ESD Protection Circuit With Uni-Directional ESD Device in BCD Technology
IEEE Transactions on Electron Devices, 2023A useful design methodology to implement the bi-directional electrostatic discharge (ESD) protection circuit with uni-directional ESD device was proposed. The proposed design methodology leverages the uni-directional ESD devices and diodes, those already
Chen-Wei Hsu, M. Ker
semanticscholar +1 more source
ESD Protection Designs: Topical Overview and Perspective
IEEE transactions on device and materials reliability, 2022Electrostatic discharge (ESD) protection remains a major challenge to integrated circuits (ICs), particularly for complex chips implemented at advanced technology nodes. Over decades, substantial advances have been made to on-chip ESD protection.
Zijin Pan +4 more
semanticscholar +1 more source
Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection
IEEE International Reliability Physics Symposium, 2022In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction.
Jian-Hsing Lee +10 more
semanticscholar +1 more source
A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT
IEEE Transactions on Electron Devices, 2022In this work, a novel GaN electrostatic discharge (ESD) protection clamp is proposed for enhancing the gate structure’s ESD reliability of the conventional (Con.) p-GaN high-electron-mobility transistor (HEMT).
Yijun Shi +10 more
semanticscholar +1 more source
Think Nontraditionally for Future ESD Protection (Invited)
Electrical Overstress/Electrostatic Discharge Symposium, 2022It is quite a consensus that ESD Design Overhead, including both ESD-induced parasitic effects (e.g., capacitance, leakage, noise) and layout difficulty (large size and floor planning), is becoming increasingly unacceptable to advanced ICs at smaller ...
Zijin Pan +5 more
semanticscholar +1 more source
A Millimeter-Wave Broadband Reflectionless ESD Protection Device
IEEE Electron Device Letters, 2022In this letter, a broadband millimeter-wave (mm-wave) electrostatic discharge (ESD) protection structure is proposed and verified in a 40-nm CMOS process.
A. Han +4 more
semanticscholar +1 more source