Results 161 to 170 of about 117,314 (288)

Spatiotemporal Plasma–Mediated Laser Fabrication of Ultrahigh‐Aspect‐Ratio Nanochannel Arrays for Vertical Perovskite Nanowire Semiconductor Devices

open access: yesAdvanced Functional Materials, EarlyView.
A spatiotemporal plasma–mediated laser processing approach is developed to fabricate ultrahigh–aspect ratio nanochannel arrays and corresponding perovskite nanowire arrays within transparent materials for optoelectronics devices. The laser‐fabricated nanochannels serve as templates for controlled perovskite infiltration and crystallization, enabling ...
Taijin Wang   +3 more
wiley   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

Mesoporous Carbon Thin Films with Large Mesopores as Model Material for Electrochemical Applications

open access: yesAdvanced Functional Materials, EarlyView.
Mesoporous carbon thin films possessing 70 nm mesopores are prepared on titanium substrates by soft templating of resol resins with a self‐synthesized poly(ethylene oxide)‐block‐poly(hexyl acrylate) block copolymer. A strategy to avoid corrosion of the metal substrate is presented, and the films are extensively characterized in terms of morphology ...
Lysander Q. Wagner   +9 more
wiley   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim   +6 more
wiley   +1 more source

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun   +6 more
wiley   +1 more source

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