A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices.
K. Racka-Szmidt +4 more
semanticscholar +1 more source
A general Lewis acidic etching route for preparing MXenes with enhanced electrochemical performance in non-aqueous electrolyte [PDF]
Two-dimensional carbides and nitrides of transition metals, known as MXenes, are a fast-growing family of materials that have attracted attention as energy storage materials.
Youbing Li +18 more
semanticscholar +1 more source
Robotic Sponge and Watercolor Painting Based on Image-Processing and Contour-Filling Algorithms
In this paper, the implementation of a robotic painting system using a sponge and the watercolor painting technique is presented. A collection of tools for calibration and sponge support operations was designed and built.
Lorenzo Scalera +4 more
doaj +1 more source
The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD [PDF]
The optical properties of a grown gallium nitride (GaN) thin film on a porous silicon (P-Si) substrate was investigated. A Photo-electrochemical etching method was used to synthesize the Psi substrate, and a physical deposition method (pulsed laser ...
Haneen Jabar +3 more
doaj +1 more source
Helicon plasma sources produce high-density discharges without the need of electrodes in direct contact with the plasma, which is thought to provide them with long operational lifetimes.
Juan I. Del Valle +4 more
doaj +1 more source
Iodide‐Mediated Rapid and Sensitive Surface Etching of Gold Nanostars for Biosensing
Iodide‐mediated surface etching can tailor the surface plasmon resonance of gold nanostars through etching of the high‐energy facets of the nanoparticle protrusions in a rapid and sensitive way.
Yunlei Xianyu +5 more
semanticscholar +1 more source
The growth of sapphire single crystals [PDF]
Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grash of numbers.
Golubović Aleksandar +3 more
doaj +3 more sources
High speed silicon wet anisotropic etching for applications in bulk micromachining: a review
Wet anisotropic etching is extensively employed in silicon bulk micromachining to fabricate microstructures for various applications in the field of microelectromechanical systems (MEMS).
P. Pal +5 more
semanticscholar +1 more source
Rapid fabrication of superhydrophobic high-silicon aluminum alloy surfaces with corrosion resistance
High-silicon aluminum alloy (high-Si Al alloy) usually used as the electronic packaging materials on the radar on ships have a susceptibility to corrosion, reducing the life of radar on ships. How to improve the corrosion-resistance ability of high-Si Al
Yankui Sun +7 more
doaj +1 more source
Impact of Thermal Treatment on the Surface of Na0.5Bi0.5TiO3-Based Ceramics
Thermal etching is a widely accepted surface treatment method for studying microstructure in Na0.5Bi0.5TiO3-based compositions. Surprisingly, besides the flat pattern of grains (suitable for evaluating ceramics’ microstructure), images illustrating well ...
Liga Bikse +7 more
doaj +1 more source

