Results 31 to 40 of about 332,589 (274)
Efficiency enhancement of Cu2ZnSnS4 solar cells via surface treatment engineering [PDF]
Royal Society Open Science, 2018 Pure-sulphide Cu2ZnSnS4 (CZTS) thin film solar cells were prepared by a low-cost, non-toxic and high-throughput method based on the thermal decomposition and reaction of sol–gel precursor solution, followed by a high temperature sulfurization process in ...
Rongrong Chen +4 more
doaj +1 more source
Low temperature sacrificial wafer bonding for planarization after very deep etching [PDF]
, 1994 A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes ...
Berenschot, J.W. +3 more
core +2 more sources
Manipulating etch selectivities in XeF2 vapour etching [PDF]
, 2021 The vapour etching of silicon sacrificial layers is often a critical process in the fabrication of micro/nanosystems. This method has a number of attractive features, in particular, high etch rates of sacrificial silicon layers and good selectivities associated with photoresist, SiO₂, stoichiometric Si₃N₄ and a number of regularly used metal films ...
Rondé, Markus +2 more
openaire +1 more source
Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching [PDF]
, 2019 With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing.
Cabrini, S +8 more
core +1 more source
Resistance abilities of （100）/（111）-faceted diamond films against oxygen plasma etching
Journal of Aeronautical Materials, 2019 The resistance abilities of (100) and (111)-faceted diamond films against oxygen plasma, 100 μm as film thickness, were investigated by the microwave power chemical vapor deposition (MPCVD) technique.
SUN Qi +6 more
doaj +1 more source
Atomic process of oxidative etching in monolayer molybdenum disulfide
, 2017 The microscopic process of oxidative etching of two-dimensional molybdenum disulfide (2D MoS2) at an atomic scale is investigated using a correlative TEM-etching study.
Jin, Chuanhong +7 more
core +1 more source
Basic elements for photodeposited high Tc thin film devices [PDF]
, 1992 Flat films, high quality insulating layers and adequately superconducting via contacts are basic elements for high Tc device fabrication. We studied the influence of the process parameters of laser deposition on the occurrence of droplets and outgrowths ...
Flokstra, J. +2 more
core +3 more sources
Frontiers in Chemistry, 2019 Metal-assisted catalytic etching (MACE) using Ag nanoparticles as catalysts and H2O2 as oxidant has been performed on single-crystal Si wafers, single-crystal electronics grade Si powders, and polycrystalline metallurgical grade Si powders.
Kurt W. Kolasinski +3 more
doaj +1 more source
Ultrasonic metal etching for metallographic analysis [PDF]
, 1971 Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures.
Young, S. G.
core +1 more source
Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage [PDF]
, 1987 We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels.
Beebe, E. D. +5 more
core +1 more source