Results 81 to 90 of about 336,560 (297)

(Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options [PDF]

open access: yes, 2015
Based on current projections, III-Vs are expected to replace Si as the n-channel solution in FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down fabrication via dry etch techniques. Vertical fins in conjunction with high
Droopad, Ravi   +12 more
core   +1 more source

Robust Spot Melting by 3D Spot Arrangements in Electron Beam Powder Bed Fusion

open access: yesAdvanced Engineering Materials, EarlyView.
This work proposes an approach to replace separately melted contours for spot melting in electron beam powder fusion. Adapting the spot arrangements close to the contour combined with stacking yields a comparable surface quality without the inherent challenges of separate contours, as demonstrated, by electron optical images and roughness measurements.
Tobias Kupfer   +4 more
wiley   +1 more source

Microstructure Evolution of a VMnFeCoNi High‐Entropy Alloy After Synthesis, Swaging, and Annealing

open access: yesAdvanced Engineering Materials, EarlyView.
The synthesis and processing (rotary swaging and annealing) of the novel VMnFeCoNi alloy is investigated, alongside the estimation of the grain size effect on hardness. Analysis of a wide grain size range of recrystallized microstructures (12–210 µm) reveals a low annealing twin density.
Aditya Srinivasan Tirunilai   +6 more
wiley   +1 more source

Shear bond strength between porcelain and nano filler composite resin with or without 9% hydrofluoric acid etching

open access: yesDental Journal, 2009
Background: Reparation technique on restorations with broken or damaged porcelain which are still attached with the teeth are difficult, because it is very hard to remove the porcelain restoration without damaging it, and it needs a long time.
Kun Ismiyatin
doaj   +1 more source

Tailoring Functional Properties of Ti–Ni–Cu Shape Memory Alloy Thin Films for MEMS Actuators

open access: yesAdvanced Engineering Materials, EarlyView.
A comprehensive study of critical parameters required to develop well‐performing Ti–Ni–Cu thin film shape memory alloy microactuators is provided. Materials science and device integration aspects are integrated by addressing structural and physical relationships using complementary characterization techniques as well as a practical fabrication solution
Elaheh Akbarnejad   +6 more
wiley   +1 more source

Serviteurs devenus maîtres : Focillon et la gravure d’interprétation

open access: yesPerspective, 2019
In the writings of Henri Focillon, engraving is presented like drawings or paintings, in the enclosed world of the artist and his copper plate. The paradox on which this discourse rests is the suppression of the process of replication and diffusion ...
Emmanuel Pernoud
doaj   +1 more source

Photoelectrochemical fabrication of spectroscopic diffraction gratings, phase 2 [PDF]

open access: yes
This program was directed toward the production of Echelle diffraction gratings by a light-driven, electrochemical etching technique (photoelectrochemical etching).
Carrabba, Michael M.   +5 more
core   +1 more source

Improved photoetching fabrication method [PDF]

open access: yes, 1972
Photoetching method producing well-defined lines with minimum undercutting was developed for etching coolant passages in nickel sheet. Phosphate coating is applied over conventional silver plate maskant and phosphoric acid solution is used to remove ...
Kistler, C. L.
core   +1 more source

Re-entrant Layer-by-Layer Etching of GaAs(001)

open access: yes, 1995
We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high ...
B. A. Joyce   +25 more
core   +1 more source

Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon [PDF]

open access: yes, 2020
The genesis, propagation, and dimensions of fractal-etch patterns that form anodically on front- or back-illuminated n-Si(100) photoelectrodes in contact with 11.9 M NH₄F(aq) has been investigated during either linear-sweep voltammetry or when the ...
Lewerenz, Hans-Joachim   +4 more
core  

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