Results 231 to 240 of about 192,249 (295)
Open-End Control of Neurite Outgrowth Lengths with Steep Bending Confinement Microchannel Patterns for Miswiring-Free Neuronal Network Formation. [PDF]
Takada N +5 more
europepmc +1 more source
Advanced Manufacturing on Nano- and Microscale. [PDF]
Zhang R, Ruan Q, Wang H, Ke Y.
europepmc +1 more source
Microfabrication of On-Demand Tapered Glass Capillaries by Etching Combined With Polishing
Micro fabrication of tapered glass capillaries with on-demand geometry is one of the essential issues to make specific devices for electrophysiological experiments, microfluidics, pharmaceutics.
Chunyang Wei +7 more
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Microfabrication by ion-beam etching
The trend in the microelectronics industry, and in particular that part of the industry concerned with the fabrication of integrated circuits, is toward circuits with increasingly high density and devices with smaller feature size. This trend has spurred interest in several new process technologies for pattern replication.
Robert E. Lee
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Laser-assisted wet chemical etching of metals for microfabrication
Laser-induced wet chemical etching of Co, Cr, Cu and Ti in aqueous solutions of potassium hydroxide and phosphoric acid was investigated using an Ar-laser operating at 514 nm. Etching of thin metal films on glass substrates and metal foils was obtained at static etch rates up to about 10 micrometers /s at an incident laser power of about 1 W.
R. Nowak, S. Metev, G. Sepold
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Microfabrication in LiNbO3 by ion-bombardment-enhanced etching
Ion-bombardment-enhanced etching is suggested as an useful microfabrication technique for LiNbO3. Diluted HF was found to be a good selective etchant for a layer damaged by Ar+ and N+. This method is compared with another microfabrication method, ion beam etching. The accuracy of the pattern width by this method is better than that ion beam etching and
M. Kawabe +3 more
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The pickup of ion beam etching depth information during microfabrication
Based on scalar quantity diffraction theory, the phase grating of micro-optics structure is studied. The light intensity distribution of diffraction fields is obtained. Results show that the peak position of light intensity moved with the variation of ion beam etching depth.
Guang-Xing Zhao, Yan Wang
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