Results 131 to 140 of about 923 (213)

Sub‐Nanometer Cobalt on Tungsten Titanium Carbide MXene (W2TiC2Tx): An Electrocatalyst for Highly Efficient and Stable Alkaline Hydrogen Evolution at Industrial‐Scale Current Density

Advanced Materials, EarlyView.
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu, Fan Yang, Deep M. Patel, Mohammad Albloushi, Qiqi Mao, Shan Jiang, Christian J. Breckner, Connor W. Schroeder, Ruoyu Cui, Tao Ma, Dapeng Jing, Wenyu Huang, Jeffrey T. Miller, Wenzhen Li, Luke T. Roling, Yue Wu   +15 more
wiley   +1 more source

Defect‐Templated Phase Engineering in Atomically Thin Metals

Advanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain, Boyang Zheng, Sawani Datta, Kanchan Ulman, Jakob Henz, Matthew Wei‐Jun Liu, Van Dong Pham, Wen He, Chengye Dong, Li‐Syuan Lu, Alexander Vera, Nader Sawtarie, Wesley Auker, Ke Wang, Bob Hengstebeck, Zachary W. Henshaw, Shreya Mathela, Maxwell Wetherington, William H. Blades, Kenneth Knappenberger, Ursula Wurstbauer, Su Ying Quek, Ulrich Starke, Shengxi Huang, Vincent H. Crespi, Joshua A. Robinson   +25 more
wiley   +1 more source

Optimization of Dry Etching Processes : Investigating Pattern Density-Dependent Etch Parameter Variations

Noggrann plasmaetsning av krom är avgörande för tillverkning av fotomasker, men att bibehålla enhetliga kritiska dimensioner över mönster med varierande densiteter är fortfarande en ständig utmaning.  Även om parametrar som kammartryck, radiofrekvenseffekt och gassammansättning har studerats, har påverkan av gasflödeshastighet på etsningsprestanda fått
openaire   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source

Spatial‐Compatibility‐Assisted Molecular Intercalation in MXenes

Advanced Materials, EarlyView.
This work demonstrates a solvent–free NH4F–mediated route for simultaneous Al removal and molecular intercalation in MXenes. Intercalants are selected by comparing their crystallographic X, Y, and Z dimensions with the MXene interlayer spacing, establishing a spatial‐compatibility criterion that rationalizes guest–host matching and enables predictive ...
Minhao Sheng, Xiaoqing Bin, Xiangyang Liu, Yingji Zhao, Wenxiu Que, Yusuke Asakura, Yusuke Yamauchi   +6 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source

Alloying‐Controlled Tuning of Interfacial Spin‐Orbit Interaction and Magnetic Damping in Crystalline FeCo Thin Films Grown on GaAs(001)

Advanced Materials, EarlyView.
The interfacial spin‐orbit interaction in single‐crystalline Fe1−xCox thin films grown on GaAs(001) can be continuously tuned via alloying. Using spin‐orbit ferromagnetic resonance, the authors find that the interfacial spin‐orbit fields exhibit a nonmonotonic dependence on Co concentration, with a minimum at 20% Co. ABSTRACT The discovery of intrinsic
Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr, Thomas N. G. Meier, Nadine Mundigl, Xianlin Qu, Zhongchang Wang, Christian H. Back, Lin Chen   +9 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

Advanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian, Wentao Shan, Rachael Found, Paola Mantegazza, Francesco Leoni, Andreas W. Erhardt, Yuyun Yao, Matus Stredansky, Arianna Magni, Adam Marks, Elena Chulanova, Zeinab Hamid, Yueying Huang, Wanpeng Lu, Xian'e Li, Baopu Zhang, Qingpei Wan, Christina Kousseff, Matilde Concilio, Ruth Theresia Arwani, Caroline A. Ross, Sahika Inal, Giovanni Costantini, Iain McCulloch   +23 more
wiley   +1 more source

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

Advanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee, Han Joo Lee, Myeonggeun Choe, Jeehong Park, Yeonjin Yi, Seongil Im, Suk Hyun Park, Hee Cheul Choi, Ji Hoon Park, Sarah S. Park   +9 more
wiley   +1 more source