Results 1 to 10 of about 17,748 (263)

Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process [PDF]

Nanomaterials, 2023
Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-spacer cavity etching and channel release both require selective etching of Si0.7Ge0.3.
Enxu Liu, Junjie Li, Na Zhou, Rui Chen, Hua Shao, Jianfeng Gao, Qingzhu Zhang, Zhenzhen Kong, Hongxiao Lin, Chenchen Zhang, Panpan Lai, Chaoran Yang, Yang Liu, Guilei Wang, Chao Zhao, Tao Yang, Huaxiang Yin, Junfeng Li, Jun Luo, Wenwu Wang   +19 more
doaj   +2 more sources

Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma [PDF]

Scientific Reports, 2022
Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure
Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Hirotaka Hamamura, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, Masaru Hori   +7 more
doaj   +2 more sources

Michaelis-Menten kinetics during dry etching processes. [PDF]

PLoS ONE
The chemical etching of germanium in Br2 environment at elevated temperatures is described by the Michaelis-Menten equation. The validity limit of Michaelis-Menten kinetics is subjected to the detailed analysis.
Rimantas Knizikevičius
doaj   +2 more sources

Sputtering yield for metal halide perovskite devices patterning [PDF]

Science and Technology of Advanced Materials
Metal halide perovskites (MHPs) are emerging semiconductors with unique optoelectronic properties promising for highly rewardable applications. Water and polar solvents instability hinders the introduction of MHPs into CMOS technology infrastructure and ...
Erfu Wu, Sergey Tsarev, Xuqi Liu, Daria Proniakova, Sergii Yakunin, Maksym V. Kovalenko, Ivan Shorubalko   +6 more
doaj   +2 more sources

Surface chemistry of thermal dry etching of cobalt thin films using hexafluoroacetylacetone (hfacH) [PDF]

Applied Surface Science, 2018
Jing Zhao, Andrew V Teplyakov
exaly   +2 more sources

Advanced Etching Techniques of LiNbO₃ Nanodevices

Nanomaterials, 2023
Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant ...
Bowen Shen, Di Hu, Cuihua Dai, Xiaoyang Yu, Xiaojun Tan, Jie Sun, Jun Jiang, Anquan Jiang   +7 more
doaj   +1 more source

Dry etching and sputtering [PDF]

Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, 2003
Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and the surface to be etched.
Wilkinson, C.D.W., Rahman, M.
openaire   +3 more sources

Dry etching of monocrystalline silicon using a laser-induced reactive micro plasma

Applied Surface Science Advances, 2021
Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, optics and photonics due to its high precision material removal with low surface and subsurface damage.
Robert Heinke, Martin Ehrhardt, Pierre Lorenz, Klaus Zimmer   +3 more
doaj   +1 more source

Towards practical quantum computers: transmon qubit with a lifetime approaching 0.5 milliseconds

npj Quantum Information, 2022
Here we report a breakthrough in the fabrication of a long lifetime transmon qubit. We use tantalum films as the base superconductor. By using a dry etching process, we obtained transmon qubits with a best T 1 lifetime of 503 μs. As a comparison, we also
Chenlu Wang, Xuegang Li, Huikai Xu, Zhiyuan Li, Junhua Wang, Zhen Yang, Zhenyu Mi, Xuehui Liang, Tang Su, Chuhong Yang, Guangyue Wang, Wenyan Wang, Yongchao Li, Mo Chen, Chengyao Li, Kehuan Linghu, Jiaxiu Han, Yingshan Zhang, Yulong Feng, Yu Song, Teng Ma, Jingning Zhang, Ruixia Wang, Peng Zhao, Weiyang Liu, Guangming Xue, Yirong Jin, Haifeng Yu   +27 more
doaj   +1 more source

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

Micromachines, 2023
The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion ...
Krzysztof Gibasiewicz, Anna Kafar, Dario Schiavon, Kiran Saba, Łucja Marona, Eliana Kamińska, Piotr Perlin   +6 more
doaj   +1 more source