Results 11 to 20 of about 17,748 (263)

Optimization of piezoelectric MEMS process on Sr and La co-doped PZT thin films [PDF]

open access: yesJournal of Advanced Dielectrics, 2020
Doped lead–zirconate–titanate (PZT) thin films are preferred for the development of micro–electro–mechanical systems (MEMS)-based acoustic sensors because of their inherent higher dielectric and piezoelectric coefficients.
M. Kathiresan   +6 more
doaj   +1 more source

Research Review of InAs/GaSb Superlattice Mesa Etching Process [PDF]

open access: yesHangkong bingqi
This paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to ...
Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
doaj   +1 more source

Dry etching of single-point cutting tool made of nano-polycrystalline diamond using oxygen plasma (Shapeable cutting edge radius)

open access: yesNihon Kikai Gakkai ronbunshu, 2022
Dry etching using oxygen plasma was conducted on a single-point cutting tool made of nano-polycrystalline diamond to clarify the shapeable cutting edge radius (CER). The CER of the tool was measured by atomic force microscopy (AFM).
Takuya SEMBA   +2 more
doaj   +1 more source

The Impact of Manufacturing Imperfections on the Performance of Metalenses and a Manufacturing-Tolerant Design Method

open access: yesMicromachines, 2022
Metalenses play an important role in optoelectronic integrated devices, given their advantages in miniaturization and integration. Due to its high aspect ratio subwavelength structure, fabricating metalenses requires a high-level dry etching technology ...
Yicheng Zhu   +7 more
doaj   +1 more source

Angstrom-scale flatness using selective nanoscale etching

open access: yesBeilstein Journal of Nanotechnology, 2017
The realization of flat surfaces on the angstrom scale is required in advanced devices to avoid loss due to carrier (electron and/or photon) scattering.
Takashi Yatsui   +2 more
doaj   +1 more source

Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment

open access: yesApplied Sciences, 2022
During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers.
Ching-Ming Ku, Stone Cheng
doaj   +1 more source

The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays [PDF]

open access: yesMetrology and Measurement Systems, 2023
The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that ...
Marta Różycka   +5 more
doaj   +1 more source

Fabrication of silicon nanotip arrays with high aspect ratio by cesium chloride self-assembly and dry etching

open access: yesAIP Advances, 2014
Nanotip arrays with high aspect ratio, which have attracted much attention due to their potential applications, have been fabricated by many methods. Dry etching combined with self-assembly masks is widely used because of the convenience of dry etching ...
Xinshuai Zhang   +4 more
doaj   +1 more source

Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles [PDF]

open access: yesAIP Advances
We demonstrated heated tetramethylammonium hydroxide (TMAH) etching (25 wt. % concentration, at 90 °C) as an effective post-dry-etch treatment for improving dry-etched trench profiles on (010) β-Ga2O3. This treatment successfully converted rough, tapered
Takayoshi Oshima
doaj   +1 more source

Planarized Trench Isolation of In0.52Al0.48As/In0.8Ga0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

open access: yesIEEE Journal of the Electron Devices Society, 2021
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT).
Houng-Wei Chen   +4 more
doaj   +1 more source

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