Results 21 to 30 of about 1,014,878 (298)
Nanotip arrays with high aspect ratio, which have attracted much attention due to their potential applications, have been fabricated by many methods. Dry etching combined with self-assembly masks is widely used because of the convenience of dry etching ...
Xinshuai Zhang +4 more
doaj +1 more source
Metalenses play an important role in optoelectronic integrated devices, given their advantages in miniaturization and integration. Due to its high aspect ratio subwavelength structure, fabricating metalenses requires a high-level dry etching technology ...
Yicheng Zhu +7 more
doaj +1 more source
During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers.
Ching-Ming Ku, Stone Cheng
doaj +1 more source
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles [PDF]
We demonstrated heated tetramethylammonium hydroxide (TMAH) etching (25 wt. % concentration, at 90 °C) as an effective post-dry-etch treatment for improving dry-etched trench profiles on (010) β-Ga2O3. This treatment successfully converted rough, tapered
Takayoshi Oshima
doaj +1 more source
Background: CR-39 nuclear track detectors are widely used in various fields, including science, technology, astronomy, and environmental preservation, to detect and register heavy ions, neutrons, and alpha particles.
Abdulkader Makki Dahham +3 more
doaj +1 more source
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT).
Houng-Wei Chen +4 more
doaj +1 more source
Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that are ...
Jun Hyeok Heo +5 more
doaj +1 more source
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel
Buqing Xu +9 more
doaj +1 more source
Golgi enzymes are retrieved from the plasma membrane to the trans‐Golgi network
Golgi enzymes are traditionally considered resident proteins retained within the Golgi apparatus. Here, we demonstrate that a subset transiently reaches the cell surface and is subsequently retrieved to the trans‐Golgi network via retrograde transport. Using a nanobody‐based toolkit, we uncover a dynamic trafficking cycle of several Golgi enzymes.
Dominik P. Buser, Tina Junne
wiley +1 more source
naitsok/ultimate-psi-etching: Ultimate PSi Etching 2.0.2.5
A NI LabVIEW-based software for electrochemical anodization of Si wafers. Features: Preistalled etching cells. Three different etching regimes: constant current, pulsed etching, and non-linear current. Preinstalled wafer liftoff pulses.
Konstantin Tamarov
core +1 more source

