Results 51 to 60 of about 10,678 (226)
Advanced Electronic Materials, EarlyView.A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi +8 more
wiley +1 more source
Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping
Advanced Electronic Materials, EarlyView.EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe +11 more
wiley +1 more source
Remoçao a Laser de Cabos-Eletrodos de Marcapassos e Cardioversores-Desfibriladores Implantáveis
Journal of Cardiac Arrhythmias, 2003 A remoçao de cabos-eletrodos de marcapassos e cardioversores-desfibriladores é um problema técnico de difícil soluçao, razao pela qual as técnicas usadas no procedimento estao sendo continuamente aperfeiçoadas.
Elizabeth Sartori CREVELARI +3 more
doaj +4 more sources
Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures
Advanced Electronic Materials, EarlyView.Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak +8 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
Scan‐Path‐ and Initial‐State‐Dependent Superdomain Switching in (111)‐Oriented PZT
Advanced Electronic Materials, EarlyView.Scan trajectory and initial superdomain topology govern polarization switching in (111)‐oriented PZT. Automated AFM writing, pulsing experiments, and interferometric 3D‐PFM show that raster scans reproducibly stabilize ordered Type‐I stripe superdomains with constrained variant selection, whereas spiral trajectories generate frustrated mixed‐variant ...
Rama Vasudevan +11 more
wiley +1 more source
SPIE Proceedings, 1987 A review of excimer laser systems is presented, including basic physical data, technology, performances and applications. The last few years have seen a rapid development of this new type of gas lasers and of many commercial systems producing efficient high power pulses of ultra-violet radiation.
+5 more sources
Advanced Electronic Materials, EarlyView.Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo +7 more
wiley +1 more source
Applied Sciences, 2018 An excimer laser three-dimensional (3D) micromachining system is proposed based on a mask image projection method and the optical diffraction effect. The effects of optical diffraction on the laser machining rate are evaluated using a hole-arrayed mask ...
Yu-Hsuan Hung +2 more
doaj +1 more source
Enhanced Spin‐Reorientation Transition and Polarization in DyFeO3 Thin Films
Advanced Electronic Materials, EarlyView.Epitaxial strain in antiferromagnetic orthoferrite thin films enhances known bulk properties into a parameter range that makes them more accessible for potential applications. We show that bulk polar properties move from 4 K towards room temperature and the magnetic field‐induced AFM to FM spin‐flip in the paramagnetic Dy lattice when applying small ...
Banani Biswas +7 more
wiley +1 more source