Results 171 to 180 of about 1,483,300 (312)
Parameter estimation for bivariate exponential sums
Benedikt Diederichs, A. Iske
semanticscholar +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Some Results on Cumulative Residual Inaccuracy Measure of k-Record Values. [PDF]
Goel R, Kumar V, Vehale S, Scott TC.
europepmc +1 more source
Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere +5 more
wiley +1 more source
A Review: Construction of Statistical Distributions. [PDF]
Fang KT, Lin YX, Deng YH.
europepmc +1 more source
The combination of formamidinium thiocyanate and 1,3‐propane diammonium iodide for bulk and top‐surface passivation, and a ternary fullerene blend to improve energy band alignment, suppresses energy losses in wide‐bandgap FAPbBr3 perovskite solar cells.
Laura Bellini +9 more
wiley +1 more source
An advanced F‐doped and ─CN group co‐modified FCCN is developed. Due to the synergistic effects of co‐modification in promoting photogenerated exciton generation, enhancing charge kinetics, expanding active interfacial areas, and optimizing CO2 interfacial reactions, the FCCN photocatalyst demonstrates excellent catalytic performance and high ...
Sheng‐Qi Guo +9 more
wiley +1 more source
Robust Lifetime Estimation from HPGe Radiation-Sensor Time Series Using Pairwise Ratios and MFV Statistics. [PDF]
Golovko VV.
europepmc +1 more source
Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra +8 more
wiley +1 more source

