Results 71 to 80 of about 115,553 (174)
Relaxor behavior and morphotropic phase boundary in a simple model
A simple model to reproduce strong enhancement of dielectric response near the morphotropic phase boundary (MPB) is proposed. This model consists of long-range dipole-dipole interaction and compositional chemical disorder incorporated by the variation in
Kato, Takeo, Tomita, Yusuke
core +1 more source
Piezoelectric and ferroelectric materials have garnered significant interest owing to their excellent physical properties and multiple potential applications.
Owoong Kwon +3 more
doaj +1 more source
A (124)-oriented SrBi4Ti4O15 (SBTi) ferroelectric thin film with high volume fraction of {\alpha}SBTi(124)=97% was obtained using a metal organic decomposition process on SiO2/Si substrate coated by (110)-oriented LaNiO3 (LNO) thin film.
B.H. Park +22 more
core +1 more source
Theoretical study of ferroelectric potassium nitrate
We present a detailed study of the structural behavior and polarization reversal mechanism in phase III of KNO$_3$, an unusual ferroelectric material in which the nitrate groups rotate during polarization reversal.
David Vanderbilt +2 more
core +1 more source
Electroactive materials with tunable response based on block copolymer self-assembly
Ferroelectric polymers are key building blocks for flexible electronic devices, but lack functionality and ability to tune their ferroelectric response. Here the authors show a method to introduce functionality in ferroelectric polymers while preserving ...
Ivan Terzic +4 more
doaj +1 more source
The non-volatile spontaneous ferroelectric polarization field serves as a cornerstone for applying ferroelectric materials in electronic devices, yet it is frequently mitigated by charge trapping at defect sites. Achieving an effective transition between
Enlong Li +9 more
doaj +1 more source
Ferroelectric Properties of Bilayer MoS2/WS2 Heterostructure Modulated by Twist Angle
The emergence of sliding ferroelectricity is found in non‐ferroelectric two‐dimensional materials, which brings novel ferroelectric phenomena and expands the potential for advancing ferroelectric devices.
Liyao Wang +12 more
doaj +1 more source
Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation
Zongyuan Fu +5 more
doaj +1 more source
We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors.
Gruverman, Alexei +6 more
openaire +3 more sources
Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film
Domain walls affect significantly ferroelectric and magnetic properties of magnetoelectric multiferroics. The stereotype is that the ferroelectric polarization will reduce at the domain walls due to the incomplete shielding of depolarization field or the
Ang Tao +8 more
doaj +1 more source

