Results 231 to 240 of about 3,777 (297)

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes. [PDF]

Nat Commun
Gan X, Zhu L, Han J, Zuo X, Zheng C, Li W, Chu J, An Z.   +7 more
europepmc   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

Memristive Physical Reservoir Computing

Advanced Science, Volume 13, Issue 33, 15 June 2026.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Enhanced energy storage in high-entropy superparaelectrics via local ferroelectric polarization. [PDF]

Nat Commun
Wei T, Zou J, Song M, Zhu K, Yan Z, Zhou Z, Zhou X, Zhou K, Zhang S, Zhang D.   +9 more
europepmc   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, Volume 13, Issue 33, 15 June 2026.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect. [PDF]

Adv Sci (Weinh)
Chen YW, Yu TY, Huang CW, Yu TH, Su YC, Chen CR, Hung WC, Chang PY, Prasad B, Lin YC, Ramesh R, Huang YL.   +11 more
europepmc   +1 more source

Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest.
Zichong Zhang, Rui Su, Wenxi Zhou, Xiaolong Jing, Tonghui Lin, Yifan Yang, Bobo Tian, Xiangshui Miao, Xingsheng Wang   +8 more
wiley   +1 more source

Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors. [PDF]

Nat Commun
Kim KD, Ryoo SK, Yeom MK, Lee SH, Choi W, Kim Y, Choi JH, Xin T, Cheng Y, Hwang CS.   +9 more
europepmc   +1 more source