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Development of Tunable Ferroelectric Ceramic Capacitors
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2023Ferroelectric perovskite ceramics with a high dielectric constant, low loss, high tunability, and high electric breakdown are ideal for nonlinear transmission lines (NLTLs) to generate radio frequency (RF) signals at high-power levels. To achieve the required properties, a comprehensive study of the material phase transitions and the optimal ratio ...
Rangel G. Aredes +7 more
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Lecture Notes on Data Engineering and Communications Technologies, 2023
Andriy Semenov +2 more
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Andriy Semenov +2 more
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Depoling a ferroelectric capacitor
Applied Physics Letters, 2002A “shrinking hysteresis loop” method, analogous to degaussing a ferromagnet, is used to depolarize a ferroelectric thin film and reach the origin, nominally the zero polarization-zero applied field state. Scanning piezoresponse imaging of the depoled state shows fragmentation into domains of up and down polarization that constitute the zero ...
M. J. Higgins +3 more
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Scanners for Ferroelectric Memory Capacitors
IEEE Transactions on Electronic Computers, 1958Many references are available on the properties and characteristics of ferroelectric materials and their memory application.1-3 The purpose of this paper is to present several scanning systems by which binary information can be stored and recalled from ferroelectric capacitor configurations.
Charles F. Pulvari, G. E. McDuffie
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Ferroelectric variable capacitors
Ferroelectrics, 1974Abstract The perovskite-like ferroelectric solid solutions (Pb, Sr)TiO3, BaTiO3-Pb(Fe1/2 Ta1/2)O3, PbO-MgO-Nb3O5 have been investigated. The electrical properties of the ceramics were measured in the temperature range -60-+100°C at a d.c. biasing field from 0 to 7 kv/mm and frequencies of 1 kc and 1.5 mc.
V. V. Klimov +2 more
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Imprint in Ferroelectric Capacitors
Japanese Journal of Applied Physics, 1996We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that
William L. Warren +7 more
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Modeling of charge switching in ferroelectric capacitors
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2004To simulate charge switching in ferroelectric capacitors, a pair of exponential growth and decay currents is mapped to the process of polarization reversal. This is based on the fact that these exponential currents [i.e., i = I(m) e(t/tau) (t < or = 0) and i = I(m) e(-t/tau) (t > or = 0)], are completely specified by two constants I(m) and tau and each
Shunming, Sun, Thottam S, Kalkur
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Analysis of distortion in tunable ferroelectric capacitors
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2010The harmonic distortion in ferroelectric capacitors is measured using a parallel resonant circuit approach. The measured results have been compared with simulated results based on the nonlinearities in capacitance versus the voltage characteristics of ferroelectric capacitors.
Yulan, Zhang, T, Kalkur
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MODELING SWITCHING DELAY OF FERROELECTRIC DOMAINS FOR FERROELECTRIC CAPACITOR
Integrated Ferroelectrics, 2006ABSTRACT A ferroelectric capacitor compact model based on physical basis with model parameters extracted from experimental measurements is proposed. A compact equivalent circuit of this model is presented for circuit simulation. Phenomena of hysteresis loops concerning switching delay of ferroelectric domains are described, and modification are made to
Chao-Gang Wei +2 more
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Adaptive Electronics with Ferroelectric Capacitors
Integrated Ferroelectrics, 2011Tunable ferroelectric capacitors such as barium strontium titanate(BST) operating in the paraelectric region offer a tunability of 50%, within a applied voltage of ± 6V up to 10 GHz. They can be successfully used for a variety of adaptive frequency circuits for communication systems on a variety of substrates.
T. S. Kalkur, Yulan Zhang
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