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Tunable microstrip resonators with ferroelectric capacitors

Radioelectronics and Communications Systems, 2010
The question of increasing the tuning band of microstrip resonators that use ferroelectric capacitors for tuning in the region of increased electric lengths is considered which allows using them in the upper part of the centimeter band (Ku-band, K-band). Band properties of regular and step-irregular resonators operating at the lowest resonant frequency
Zakharov, Alexander V.   +3 more
openaire   +2 more sources

Properties of Tunable Filters with Ferroelectric Capacitors

Integrated Ferroelectrics, 2002
The range of a tunability of the filter with ferroelectric capacitor is determined by the commutation quality factor (CQF), which takes into account both the tunability of the capacitor under biasing voltage and the loss factor. For effective tuning, the CQF should be high enough (more than 1000).
O. G. Vendik   +4 more
openaire   +1 more source

Series resonance circuit with ferroelectric capacitor

Phase Transitions, 1993
A series resonance circuit under sinuousoidal driving is investigated experimentally. The inductance consists of an air coil.
Eckart Brauer   +3 more
openaire   +1 more source

Modeling ferroelectric capacitors for memory applications

IEEE Circuits and Devices Magazine, 2002
The ferroelectric capacitor model is the foundation for accurate simulation of ferroelectric hysteresis loops and minor loops, transitions between the loops under arbitrary voltage patterns, transient responses of ferroelectric capacitors to short voltage pulses with widths in the nano-second range, and temperature behaviors of ferroelectric capacitors.
null Xiao-Hong Du, null Bing Sheu
openaire   +1 more source

Thin film ferroelectrics for capacitor applications

Journal of Materials Science: Materials in Electronics, 1998
Pulsed laser deposition (PLD) has been used to fabricate simple thin film capacitor structures with a variety of ferroelectric materials. Thin film capacitors using the conventional ferroelectric material BaxSr1-xTiO3(BSTO) have been made across the entire compositional series.
D O'neill   +4 more
openaire   +1 more source

A survey of behavioral modeling of ferroelectric capacitors

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 1997
Six different behavioral models for ferroelectric capacitors are surveyed with an emphasis on their usefulness in the transient circuit simulation of integrated nonvolatile memories. These models can be broadly classified into two categories, namely, those that rely on the hysteresis loop and those that rely on the switching current of a ferroelectric ...
A. Sheikholeslami, P.G. Gulak
openaire   +1 more source

3D Vertical Ferroelectric Capacitors with Excellent Scalability

Nano Letters
Three-dimensional vertically stacked memory is more cost-effective than two-dimensional stacked memory. Vertically stacked memory using ferroelectric materials has great potential not only in high-density memory but also in neuromorphic fields because it secures low voltage and fast operation speed.
Eunjin Lim   +3 more
openaire   +2 more sources

Ferroelectric Capacitor Modelling in LTSpice

2022 IEEE 15th Dallas Circuit And System Conference (DCAS), 2022
Anjali Pavarattykaran Jose   +1 more
openaire   +1 more source

Cryogenic Characteristics of Ferroelectric Capacitors and Ferroelectric Field-Effect Transistors

ECS Meeting Abstracts
Ferroelectricity exhibits two stable states with permanent polarizations, making it promising for nonvolatile memory applications. Compared to conventional perovskite ferroelectrics, hafnium-based ferroelectric materials, such as Hf0.5Zr0.5O2 (HZO), attracts much attention due to their compatibility with CMOS technology [1].
Yi Tzu Wang   +2 more
openaire   +1 more source

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